Effect of the Deposit Temperature of ZnO Doped with Ni by HFCVD
The effect of the deposit temperature of zinc oxide (ZnO) doped with nickel (Ni) by hot filament chemical vapor deposition (HFCVD) technique is reported in this work. The technique allows depositing ZnO:Ni in short intervals (1 min). A deposit of undoped ZnO is used as a reference sample. The refere...
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2023-02-01
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| Online Access: | https://www.mdpi.com/1996-1944/16/4/1526 |
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| author | Delfino R. Gutiérrez Godofredo García-Salgado Antonio Coyopol Enrique Rosendo-Andrés Román Romano Crisóforo Morales Alfredo Benítez Francisco Severiano Ana María Herrera Francisco Ramírez-González |
| author_facet | Delfino R. Gutiérrez Godofredo García-Salgado Antonio Coyopol Enrique Rosendo-Andrés Román Romano Crisóforo Morales Alfredo Benítez Francisco Severiano Ana María Herrera Francisco Ramírez-González |
| author_sort | Delfino R. Gutiérrez |
| collection | DOAJ |
| description | The effect of the deposit temperature of zinc oxide (ZnO) doped with nickel (Ni) by hot filament chemical vapor deposition (HFCVD) technique is reported in this work. The technique allows depositing ZnO:Ni in short intervals (1 min). A deposit of undoped ZnO is used as a reference sample. The reference sample was deposited at 500 °C. The ZnO:Ni samples were deposited at 500 °C, 400 °C, 350 °C, and 300 °C. The samples were studied using structural, morphological, and optical characterization techniques. The Ni incorporation to the ZnO lattice was verified by the shift of the X-ray diffraction peaks, the Raman peaks, the band gap, and the photoluminescence measurements. It was found that the deposit temperature affects the structural, morphological, and optical properties of the ZnO:Ni samples too. The structure of the ZnO:Ni samples corresponds to the hexagonal structure. Different microstructures shapes such as spheres, sea urchins, and agglomerate were found in samples; their change is attributed to the deposit temperature variation. The intensity of the photoluminescence of the ZnO:Ni improves concerning the ZnO due to the Ni incorporation, but it decreases as the deposit temperature decreases. |
| first_indexed | 2024-03-11T08:29:56Z |
| format | Article |
| id | doaj.art-f6568c7a451443fba96d29c0d999059a |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-11T08:29:56Z |
| publishDate | 2023-02-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Materials |
| spelling | doaj.art-f6568c7a451443fba96d29c0d999059a2023-11-16T21:50:58ZengMDPI AGMaterials1996-19442023-02-01164152610.3390/ma16041526Effect of the Deposit Temperature of ZnO Doped with Ni by HFCVDDelfino R. Gutiérrez0Godofredo García-Salgado1Antonio Coyopol2Enrique Rosendo-Andrés3Román Romano4Crisóforo Morales5Alfredo Benítez6Francisco Severiano7Ana María Herrera8Francisco Ramírez-González9IC-CIDS, Benemérita Universidad Autónoma de Puebla, Ed. IC5, Col. San Manuel, Puebla 72570, MexicoIC-CIDS, Benemérita Universidad Autónoma de Puebla, Ed. IC5, Col. San Manuel, Puebla 72570, MexicoIC-CIDS, Benemérita Universidad Autónoma de Puebla, Ed. IC5, Col. San Manuel, Puebla 72570, MexicoIC-CIDS, Benemérita Universidad Autónoma de Puebla, Ed. IC5, Col. San Manuel, Puebla 72570, MexicoIC-CIDS, Benemérita Universidad Autónoma de Puebla, Ed. IC5, Col. San Manuel, Puebla 72570, MexicoIC-CIDS, Benemérita Universidad Autónoma de Puebla, Ed. IC5, Col. San Manuel, Puebla 72570, MexicoCONACYT-CIO, Lomas del Bosque 115, Col. Lomas del Campestre, León 37150, MexicoCONACYT-IPN, Av. Insurgentes Sur 1582, Col. Crédito Constructor, Del. Benito Juárez, Ciudad de Mexico 03940, MexicoDepartamento de Investigación en Física, Universidad de Sonora (UNISON), Hermosillo 83190, MexicoIIIER, Universidad de Ciencias y Artes de Chiapas, Libramiento Norte 1150 Lajas Maciel, Tuxtla Gutiérrez 29039, MexicoThe effect of the deposit temperature of zinc oxide (ZnO) doped with nickel (Ni) by hot filament chemical vapor deposition (HFCVD) technique is reported in this work. The technique allows depositing ZnO:Ni in short intervals (1 min). A deposit of undoped ZnO is used as a reference sample. The reference sample was deposited at 500 °C. The ZnO:Ni samples were deposited at 500 °C, 400 °C, 350 °C, and 300 °C. The samples were studied using structural, morphological, and optical characterization techniques. The Ni incorporation to the ZnO lattice was verified by the shift of the X-ray diffraction peaks, the Raman peaks, the band gap, and the photoluminescence measurements. It was found that the deposit temperature affects the structural, morphological, and optical properties of the ZnO:Ni samples too. The structure of the ZnO:Ni samples corresponds to the hexagonal structure. Different microstructures shapes such as spheres, sea urchins, and agglomerate were found in samples; their change is attributed to the deposit temperature variation. The intensity of the photoluminescence of the ZnO:Ni improves concerning the ZnO due to the Ni incorporation, but it decreases as the deposit temperature decreases.https://www.mdpi.com/1996-1944/16/4/1526HFCVD techniquezinc oxidenickeldopanttemperature |
| spellingShingle | Delfino R. Gutiérrez Godofredo García-Salgado Antonio Coyopol Enrique Rosendo-Andrés Román Romano Crisóforo Morales Alfredo Benítez Francisco Severiano Ana María Herrera Francisco Ramírez-González Effect of the Deposit Temperature of ZnO Doped with Ni by HFCVD Materials HFCVD technique zinc oxide nickel dopant temperature |
| title | Effect of the Deposit Temperature of ZnO Doped with Ni by HFCVD |
| title_full | Effect of the Deposit Temperature of ZnO Doped with Ni by HFCVD |
| title_fullStr | Effect of the Deposit Temperature of ZnO Doped with Ni by HFCVD |
| title_full_unstemmed | Effect of the Deposit Temperature of ZnO Doped with Ni by HFCVD |
| title_short | Effect of the Deposit Temperature of ZnO Doped with Ni by HFCVD |
| title_sort | effect of the deposit temperature of zno doped with ni by hfcvd |
| topic | HFCVD technique zinc oxide nickel dopant temperature |
| url | https://www.mdpi.com/1996-1944/16/4/1526 |
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