Overall High-Performance Near-Infrared Photodetector Based on CVD-Grown MoTe<sub>2</sub> and Graphene Vertical vdWs Heterostructure
Two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides (TMDCs), are highly appealing in the fields of electronics, optoelectronics, energy, etc. Graphene, with high conductivity and high carrier mobility, is an excellent candidate for transparent electrodes. TMDCs have...
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| Format: | Article |
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MDPI AG
2022-04-01
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| Series: | Applied Sciences |
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| Online Access: | https://www.mdpi.com/2076-3417/12/7/3622 |
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| author | Wanying Du Xing Cheng Zhihong Zhang Zhixuan Cheng Xiaolong Xu Wanjing Xu Yanping Li Kaihui Liu Lun Dai |
| author_facet | Wanying Du Xing Cheng Zhihong Zhang Zhixuan Cheng Xiaolong Xu Wanjing Xu Yanping Li Kaihui Liu Lun Dai |
| author_sort | Wanying Du |
| collection | DOAJ |
| description | Two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides (TMDCs), are highly appealing in the fields of electronics, optoelectronics, energy, etc. Graphene, with high conductivity and high carrier mobility, is an excellent candidate for transparent electrodes. TMDCs have remarkably strong light absorption in the range of visible to infrared wavelength. High-performance photodetectors are expected to achieve through the combination of graphene and TMDCs. Nowadays, near-infrared (NIR) photodetectors play significant roles in many areas. MoTe<sub>2</sub> with bandgap energy of about 1.0 eV in its bulk form is a promising material for cost-saving NIR photodetectors. Thus far, only a few of the reported studies on NIR photodetectors built on MoTe<sub>2</sub>/graphene heterostructures have achieved high responsivity and short response time simultaneously in one device. In this study, we fabricate graphene–MoTe<sub>2</sub>–graphene vertical van der Waals heterostructure devices through chemical vapor deposition (CVD) growth, wet transfer method, and dry etching technique. Under 1064 nm laser illumination, we acquire responsivity of as high as 635 A/W and a response time of as short as 19 μs from the as-fabricated device. Moreover, we acquire higher responsivity of 1752 A/W and a shorter response time of 16 μs from the Al<sub>2</sub>O<sub>3</sub>-encapsulated device. Our research drives the application of 2D materials in the NIR wavelength range. |
| first_indexed | 2024-03-09T12:06:13Z |
| format | Article |
| id | doaj.art-f665bf0e5d704c888328d8b488073f06 |
| institution | Directory Open Access Journal |
| issn | 2076-3417 |
| language | English |
| last_indexed | 2024-03-09T12:06:13Z |
| publishDate | 2022-04-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Applied Sciences |
| spelling | doaj.art-f665bf0e5d704c888328d8b488073f062023-11-30T22:58:17ZengMDPI AGApplied Sciences2076-34172022-04-01127362210.3390/app12073622Overall High-Performance Near-Infrared Photodetector Based on CVD-Grown MoTe<sub>2</sub> and Graphene Vertical vdWs HeterostructureWanying Du0Xing Cheng1Zhihong Zhang2Zhixuan Cheng3Xiaolong Xu4Wanjing Xu5Yanping Li6Kaihui Liu7Lun Dai8State Key Lab. for Artificial Microstructure & Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing 100871, ChinaState Key Lab. for Artificial Microstructure & Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing 100871, ChinaState Key Lab. for Artificial Microstructure & Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing 100871, ChinaState Key Lab. for Artificial Microstructure & Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing 100871, ChinaState Key Lab. for Artificial Microstructure & Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing 100871, ChinaState Key Lab. for Artificial Microstructure & Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing 100871, ChinaState Key Lab. for Artificial Microstructure & Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing 100871, ChinaState Key Lab. for Artificial Microstructure & Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing 100871, ChinaState Key Lab. for Artificial Microstructure & Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing 100871, ChinaTwo-dimensional (2D) materials, such as graphene and transition metal dichalcogenides (TMDCs), are highly appealing in the fields of electronics, optoelectronics, energy, etc. Graphene, with high conductivity and high carrier mobility, is an excellent candidate for transparent electrodes. TMDCs have remarkably strong light absorption in the range of visible to infrared wavelength. High-performance photodetectors are expected to achieve through the combination of graphene and TMDCs. Nowadays, near-infrared (NIR) photodetectors play significant roles in many areas. MoTe<sub>2</sub> with bandgap energy of about 1.0 eV in its bulk form is a promising material for cost-saving NIR photodetectors. Thus far, only a few of the reported studies on NIR photodetectors built on MoTe<sub>2</sub>/graphene heterostructures have achieved high responsivity and short response time simultaneously in one device. In this study, we fabricate graphene–MoTe<sub>2</sub>–graphene vertical van der Waals heterostructure devices through chemical vapor deposition (CVD) growth, wet transfer method, and dry etching technique. Under 1064 nm laser illumination, we acquire responsivity of as high as 635 A/W and a response time of as short as 19 μs from the as-fabricated device. Moreover, we acquire higher responsivity of 1752 A/W and a shorter response time of 16 μs from the Al<sub>2</sub>O<sub>3</sub>-encapsulated device. Our research drives the application of 2D materials in the NIR wavelength range.https://www.mdpi.com/2076-3417/12/7/3622near-infrared photodetectorMoTe<sub>2</sub>graphenevertical vdWs heterostructurechemical vapor deposition (CVD)two-dimensional (2D) materials |
| spellingShingle | Wanying Du Xing Cheng Zhihong Zhang Zhixuan Cheng Xiaolong Xu Wanjing Xu Yanping Li Kaihui Liu Lun Dai Overall High-Performance Near-Infrared Photodetector Based on CVD-Grown MoTe<sub>2</sub> and Graphene Vertical vdWs Heterostructure Applied Sciences near-infrared photodetector MoTe<sub>2</sub> graphene vertical vdWs heterostructure chemical vapor deposition (CVD) two-dimensional (2D) materials |
| title | Overall High-Performance Near-Infrared Photodetector Based on CVD-Grown MoTe<sub>2</sub> and Graphene Vertical vdWs Heterostructure |
| title_full | Overall High-Performance Near-Infrared Photodetector Based on CVD-Grown MoTe<sub>2</sub> and Graphene Vertical vdWs Heterostructure |
| title_fullStr | Overall High-Performance Near-Infrared Photodetector Based on CVD-Grown MoTe<sub>2</sub> and Graphene Vertical vdWs Heterostructure |
| title_full_unstemmed | Overall High-Performance Near-Infrared Photodetector Based on CVD-Grown MoTe<sub>2</sub> and Graphene Vertical vdWs Heterostructure |
| title_short | Overall High-Performance Near-Infrared Photodetector Based on CVD-Grown MoTe<sub>2</sub> and Graphene Vertical vdWs Heterostructure |
| title_sort | overall high performance near infrared photodetector based on cvd grown mote sub 2 sub and graphene vertical vdws heterostructure |
| topic | near-infrared photodetector MoTe<sub>2</sub> graphene vertical vdWs heterostructure chemical vapor deposition (CVD) two-dimensional (2D) materials |
| url | https://www.mdpi.com/2076-3417/12/7/3622 |
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