Bilayer Lipid Membrane as Memcapacitance: Capacitance–Voltage Pinched Hysteresis and Negative Insertion Conductance
Inelastic (dissipative) effects of different natures in lipid bilayer membranes can lead to hysteresis phenomena. Early, it was shown that lipid bilayer membranes, under the action of a periodic sinusoidal voltage, demonstrate pinched-hysteresis loops in the experimental capacitance–voltage dependen...
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MDPI AG
2023-01-01
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Series: | Membranes |
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Online Access: | https://www.mdpi.com/2077-0375/13/1/97 |
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author | Elena Yu. Smirnova Andrey A. Anosov |
author_facet | Elena Yu. Smirnova Andrey A. Anosov |
author_sort | Elena Yu. Smirnova |
collection | DOAJ |
description | Inelastic (dissipative) effects of different natures in lipid bilayer membranes can lead to hysteresis phenomena. Early, it was shown that lipid bilayer membranes, under the action of a periodic sinusoidal voltage, demonstrate pinched-hysteresis loops in the experimental capacitance–voltage dependences and are almost the only example of the physical implementation of memcapacitance. Here, we propose an equivalent circuit and mathematical framework for analyzing the dynamic nonlinear current response of a lipid bilayer membrane as an externally controlled memcapacitance. Solving a nonlinear differential equation for the equivalent circuit of a membrane in the form of a parallel connection of a nonlinear viscoelastic capacitor and an active resistance using the small parameter method, we obtain explicit analytical dependences for the current response of the membrane and pinched-hysteresis loops. The explicit solutions and their comparison with experimental data allow us to identify the lumped equivalent circuit parameters that govern the memcapacitor behavior of the membrane and hence the magnitude of the hysteresis. We quantify the memcapacitance hysteresis in terms of negative work done by the control signal. An analysis of the formulas leads to the conclusion that the determining factor for the appearance of pinched hysteresis is the type of nonlinear dependence of the device capacitance on voltage. |
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format | Article |
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issn | 2077-0375 |
language | English |
last_indexed | 2024-03-09T11:44:02Z |
publishDate | 2023-01-01 |
publisher | MDPI AG |
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series | Membranes |
spelling | doaj.art-f682699e34c24cc495f6f096fbfec7bf2023-11-30T23:27:10ZengMDPI AGMembranes2077-03752023-01-011319710.3390/membranes13010097Bilayer Lipid Membrane as Memcapacitance: Capacitance–Voltage Pinched Hysteresis and Negative Insertion ConductanceElena Yu. Smirnova0Andrey A. Anosov1The Department of Medical and Biological Physics, Sechenov First Moscow State Medical University (Sechenov University), 119991 Moscow, RussiaThe Department of Medical and Biological Physics, Sechenov First Moscow State Medical University (Sechenov University), 119991 Moscow, RussiaInelastic (dissipative) effects of different natures in lipid bilayer membranes can lead to hysteresis phenomena. Early, it was shown that lipid bilayer membranes, under the action of a periodic sinusoidal voltage, demonstrate pinched-hysteresis loops in the experimental capacitance–voltage dependences and are almost the only example of the physical implementation of memcapacitance. Here, we propose an equivalent circuit and mathematical framework for analyzing the dynamic nonlinear current response of a lipid bilayer membrane as an externally controlled memcapacitance. Solving a nonlinear differential equation for the equivalent circuit of a membrane in the form of a parallel connection of a nonlinear viscoelastic capacitor and an active resistance using the small parameter method, we obtain explicit analytical dependences for the current response of the membrane and pinched-hysteresis loops. The explicit solutions and their comparison with experimental data allow us to identify the lumped equivalent circuit parameters that govern the memcapacitor behavior of the membrane and hence the magnitude of the hysteresis. We quantify the memcapacitance hysteresis in terms of negative work done by the control signal. An analysis of the formulas leads to the conclusion that the determining factor for the appearance of pinched hysteresis is the type of nonlinear dependence of the device capacitance on voltage.https://www.mdpi.com/2077-0375/13/1/97bilayer lipid membranesnon-linear capacitancepinched hysteresis loopsmemcapacitancenegative conductance |
spellingShingle | Elena Yu. Smirnova Andrey A. Anosov Bilayer Lipid Membrane as Memcapacitance: Capacitance–Voltage Pinched Hysteresis and Negative Insertion Conductance Membranes bilayer lipid membranes non-linear capacitance pinched hysteresis loops memcapacitance negative conductance |
title | Bilayer Lipid Membrane as Memcapacitance: Capacitance–Voltage Pinched Hysteresis and Negative Insertion Conductance |
title_full | Bilayer Lipid Membrane as Memcapacitance: Capacitance–Voltage Pinched Hysteresis and Negative Insertion Conductance |
title_fullStr | Bilayer Lipid Membrane as Memcapacitance: Capacitance–Voltage Pinched Hysteresis and Negative Insertion Conductance |
title_full_unstemmed | Bilayer Lipid Membrane as Memcapacitance: Capacitance–Voltage Pinched Hysteresis and Negative Insertion Conductance |
title_short | Bilayer Lipid Membrane as Memcapacitance: Capacitance–Voltage Pinched Hysteresis and Negative Insertion Conductance |
title_sort | bilayer lipid membrane as memcapacitance capacitance voltage pinched hysteresis and negative insertion conductance |
topic | bilayer lipid membranes non-linear capacitance pinched hysteresis loops memcapacitance negative conductance |
url | https://www.mdpi.com/2077-0375/13/1/97 |
work_keys_str_mv | AT elenayusmirnova bilayerlipidmembraneasmemcapacitancecapacitancevoltagepinchedhysteresisandnegativeinsertionconductance AT andreyaanosov bilayerlipidmembraneasmemcapacitancecapacitancevoltagepinchedhysteresisandnegativeinsertionconductance |