Orthogonal Experimental Research on Dielectrophoresis Polishing (DEPP) of Silicon Wafer
Silicon wafer with high surface quality is widely used as substrate materials in the fields of micromachines and microelectronics, so a high-efficiency and high-quality polishing method is urgently needed to meet its large demand. In this paper, a dielectrophoresis polishing (DEPP) method was propos...
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| Format: | Article |
| Language: | English |
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MDPI AG
2020-05-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/11/6/544 |
| _version_ | 1797566920422064128 |
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| author | Tianchen Zhao Qianfa Deng Cheng Zhang Kaiping Feng Zhaozhong Zhou Julong Yuan |
| author_facet | Tianchen Zhao Qianfa Deng Cheng Zhang Kaiping Feng Zhaozhong Zhou Julong Yuan |
| author_sort | Tianchen Zhao |
| collection | DOAJ |
| description | Silicon wafer with high surface quality is widely used as substrate materials in the fields of micromachines and microelectronics, so a high-efficiency and high-quality polishing method is urgently needed to meet its large demand. In this paper, a dielectrophoresis polishing (DEPP) method was proposed, which applied a non-uniform electric field to the polishing area to slow down the throw-out effect of centrifugal force, thereby achieving high-efficiency and high-quality polishing of silicon wafers. The principle of DEPP was described. Orthogonal experiments on important polishing process parameters were carried out. Contrast polishing experiments of silicon wafer were conducted. The orthogonal experimental results showed that the influence ratio of electric field intensity and rotation speed on material removal rate (MRR) and surface roughness was more than 80%. The optimal combination of process parameters was electric field intensity 450 V/mm, rotation speed 90 rpm, abrasive concentration 30 wt%, size of abrasive particle 80 nm. Contrast polishing experiments indicated that the MRR and material removal uniformity of DEPP were significantly better than traditional chemical mechanical polishing (CMP). Compared with the traditional CMP, the MRR of DEPP was increased by 17.6%, and the final surface roughness of silicon wafer reached <i>R</i>a 0.31 nm. DEPP can achieve high-efficiency and high-quality processing of silicon wafer. |
| first_indexed | 2024-03-10T19:34:15Z |
| format | Article |
| id | doaj.art-f6a4aa52e0d74c8fb7f1bb7666ec5fcc |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-10T19:34:15Z |
| publishDate | 2020-05-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-f6a4aa52e0d74c8fb7f1bb7666ec5fcc2023-11-20T01:55:10ZengMDPI AGMicromachines2072-666X2020-05-0111654410.3390/mi11060544Orthogonal Experimental Research on Dielectrophoresis Polishing (DEPP) of Silicon WaferTianchen Zhao0Qianfa Deng1Cheng Zhang2Kaiping Feng3Zhaozhong Zhou4Julong Yuan5Key Laboratory of Air-driven Equipment Technology of Zhejiang Province, Quzhou University, Quzhou 324000, ChinaUltra-precision Machining Centre, Zhejiang University of Technology, Hangzhou 310014, ChinaCollege of Mechanical and Electrical Engineering, Wenzhou University, Wenzhou 325035, ChinaKey Laboratory of Air-driven Equipment Technology of Zhejiang Province, Quzhou University, Quzhou 324000, ChinaKey Laboratory of Air-driven Equipment Technology of Zhejiang Province, Quzhou University, Quzhou 324000, ChinaUltra-precision Machining Centre, Zhejiang University of Technology, Hangzhou 310014, ChinaSilicon wafer with high surface quality is widely used as substrate materials in the fields of micromachines and microelectronics, so a high-efficiency and high-quality polishing method is urgently needed to meet its large demand. In this paper, a dielectrophoresis polishing (DEPP) method was proposed, which applied a non-uniform electric field to the polishing area to slow down the throw-out effect of centrifugal force, thereby achieving high-efficiency and high-quality polishing of silicon wafers. The principle of DEPP was described. Orthogonal experiments on important polishing process parameters were carried out. Contrast polishing experiments of silicon wafer were conducted. The orthogonal experimental results showed that the influence ratio of electric field intensity and rotation speed on material removal rate (MRR) and surface roughness was more than 80%. The optimal combination of process parameters was electric field intensity 450 V/mm, rotation speed 90 rpm, abrasive concentration 30 wt%, size of abrasive particle 80 nm. Contrast polishing experiments indicated that the MRR and material removal uniformity of DEPP were significantly better than traditional chemical mechanical polishing (CMP). Compared with the traditional CMP, the MRR of DEPP was increased by 17.6%, and the final surface roughness of silicon wafer reached <i>R</i>a 0.31 nm. DEPP can achieve high-efficiency and high-quality processing of silicon wafer.https://www.mdpi.com/2072-666X/11/6/544silicon waferdielectrophoresis polishingorthogonal experimentmaterial removal ratesurface roughness |
| spellingShingle | Tianchen Zhao Qianfa Deng Cheng Zhang Kaiping Feng Zhaozhong Zhou Julong Yuan Orthogonal Experimental Research on Dielectrophoresis Polishing (DEPP) of Silicon Wafer Micromachines silicon wafer dielectrophoresis polishing orthogonal experiment material removal rate surface roughness |
| title | Orthogonal Experimental Research on Dielectrophoresis Polishing (DEPP) of Silicon Wafer |
| title_full | Orthogonal Experimental Research on Dielectrophoresis Polishing (DEPP) of Silicon Wafer |
| title_fullStr | Orthogonal Experimental Research on Dielectrophoresis Polishing (DEPP) of Silicon Wafer |
| title_full_unstemmed | Orthogonal Experimental Research on Dielectrophoresis Polishing (DEPP) of Silicon Wafer |
| title_short | Orthogonal Experimental Research on Dielectrophoresis Polishing (DEPP) of Silicon Wafer |
| title_sort | orthogonal experimental research on dielectrophoresis polishing depp of silicon wafer |
| topic | silicon wafer dielectrophoresis polishing orthogonal experiment material removal rate surface roughness |
| url | https://www.mdpi.com/2072-666X/11/6/544 |
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