Defect-Induced Tunable Permittivity of Epsilon-Near-Zero in Indium Tin Oxide Thin Films
Defect-induced tunable permittivity of Epsilon-Near-Zero (ENZ) in indium tin oxide (ITO) thin films via annealing at different temperatures with mixed gases (98% Ar, 2% O<sub>2</sub>) was reported. Red-shift of λ<sub>ENZ</sub> (Epsilon-Near-Zero wavelength) from 1422...
Main Authors: | Jiqing Lian, Dawei Zhang, Ruijin Hong, Peizhen Qiu, Taiguo Lv, Daohua Zhang |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2018-11-01
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Series: | Nanomaterials |
Subjects: | |
Online Access: | https://www.mdpi.com/2079-4991/8/11/922 |
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