Study the Effect of X-Ray on BJT Transistor at Different Periods of Time
In this research it has been studied the influence of X-Ray on the BJT (bipolar junction transistor ) NPN type NO 2N3035 for (5,10,15,20,25,30,35,40) min intervals . the (ICE ,VCE) and (IB-VBE ) characteristics have been studied for every irradiation time to in addition to study the change in (VB –...
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| Format: | Article |
| Language: | English |
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University of Kirkuk
2010-12-01
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| Series: | Kirkuk Journal of Science |
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| Online Access: | https://kujss.uokirkuk.edu.iq/article_41433_0004b441450bc176da82cf10e0f418a0.pdf |
| Summary: | In this research it has been studied the influence of X-Ray on the BJT (bipolar junction transistor ) NPN type NO 2N3035 for (5,10,15,20,25,30,35,40) min intervals . the (ICE ,VCE) and (IB-VBE ) characteristics have been studied for every irradiation time to in addition to study the change in (VB – β ) values according to the irradiation times . Also the transistor used as an amplifier which has the reverse feedback to study the irradiation effect on the amplification factor (Aƒ) . it is found that the values of (VCE,IC) and (VB, β) have been decreased as the irradiation times decreased . the transistor showed a littlie changes of (Aƒ) when the reverse feedback used and the output signal suffering no any distortion . |
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| ISSN: | 3005-4788 3005-4796 |