Prospect of Spin-Orbitronic Devices and Their Applications
Summary: Science, engineering, and medicine ultimately demand fast information processing with ultra-low power consumption. The recently developed spin-orbit torque (SOT)-induced magnetization switching paradigm has been fueling opportunities for spin-orbitronic devices, i.e., enabling SOT memory an...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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Elsevier
2020-10-01
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| Series: | iScience |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2589004220308063 |
| _version_ | 1818188121986039808 |
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| author | Yi Cao Guozhong Xing Huai Lin Nan Zhang Houzhi Zheng Kaiyou Wang |
| author_facet | Yi Cao Guozhong Xing Huai Lin Nan Zhang Houzhi Zheng Kaiyou Wang |
| author_sort | Yi Cao |
| collection | DOAJ |
| description | Summary: Science, engineering, and medicine ultimately demand fast information processing with ultra-low power consumption. The recently developed spin-orbit torque (SOT)-induced magnetization switching paradigm has been fueling opportunities for spin-orbitronic devices, i.e., enabling SOT memory and logic devices at sub-nano second and sub-picojoule regimes. Importantly, spin-orbitronic devices are intrinsic of nonvolatility, anti-radiation, unlimited endurance, excellent stability, and CMOS compatibility, toward emerging applications, e.g., processing in-memory, neuromorphic computing, probabilistic computing, and 3D magnetic random access memory. Nevertheless, the cutting-edge SOT-based devices and application remain at a premature stage owing to the lack of scalable methodology on the field-free SOT switching. Moreover, spin-orbitronics poises as an interdisciplinary field to be driven by goals of both fundamental discoveries and application innovations, to open fascinating new paths for basic research and new line of technologies. In this perspective, the specific challenges and opportunities are summarized to exert momentum on both research and eventual applications of spin-orbitronic devices. |
| first_indexed | 2024-12-11T23:21:54Z |
| format | Article |
| id | doaj.art-f70081ed5a994205919bef7246ed4a54 |
| institution | Directory Open Access Journal |
| issn | 2589-0042 |
| language | English |
| last_indexed | 2024-12-11T23:21:54Z |
| publishDate | 2020-10-01 |
| publisher | Elsevier |
| record_format | Article |
| series | iScience |
| spelling | doaj.art-f70081ed5a994205919bef7246ed4a542022-12-22T00:46:19ZengElsevieriScience2589-00422020-10-012310101614Prospect of Spin-Orbitronic Devices and Their ApplicationsYi Cao0Guozhong Xing1Huai Lin2Nan Zhang3Houzhi Zheng4Kaiyou Wang5Beijing Academy of Quantum Information Sciences, Beijing 100193, P. R. ChinaKey Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, P. R. ChinaKey Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, P. R. ChinaState Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. ChinaState Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. ChinaBeijing Academy of Quantum Information Sciences, Beijing 100193, P. R. China; State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China; Corresponding authorSummary: Science, engineering, and medicine ultimately demand fast information processing with ultra-low power consumption. The recently developed spin-orbit torque (SOT)-induced magnetization switching paradigm has been fueling opportunities for spin-orbitronic devices, i.e., enabling SOT memory and logic devices at sub-nano second and sub-picojoule regimes. Importantly, spin-orbitronic devices are intrinsic of nonvolatility, anti-radiation, unlimited endurance, excellent stability, and CMOS compatibility, toward emerging applications, e.g., processing in-memory, neuromorphic computing, probabilistic computing, and 3D magnetic random access memory. Nevertheless, the cutting-edge SOT-based devices and application remain at a premature stage owing to the lack of scalable methodology on the field-free SOT switching. Moreover, spin-orbitronics poises as an interdisciplinary field to be driven by goals of both fundamental discoveries and application innovations, to open fascinating new paths for basic research and new line of technologies. In this perspective, the specific challenges and opportunities are summarized to exert momentum on both research and eventual applications of spin-orbitronic devices.http://www.sciencedirect.com/science/article/pii/S2589004220308063Applied PhysicsDevicesElectronic MaterialsMagnetic Property |
| spellingShingle | Yi Cao Guozhong Xing Huai Lin Nan Zhang Houzhi Zheng Kaiyou Wang Prospect of Spin-Orbitronic Devices and Their Applications iScience Applied Physics Devices Electronic Materials Magnetic Property |
| title | Prospect of Spin-Orbitronic Devices and Their Applications |
| title_full | Prospect of Spin-Orbitronic Devices and Their Applications |
| title_fullStr | Prospect of Spin-Orbitronic Devices and Their Applications |
| title_full_unstemmed | Prospect of Spin-Orbitronic Devices and Their Applications |
| title_short | Prospect of Spin-Orbitronic Devices and Their Applications |
| title_sort | prospect of spin orbitronic devices and their applications |
| topic | Applied Physics Devices Electronic Materials Magnetic Property |
| url | http://www.sciencedirect.com/science/article/pii/S2589004220308063 |
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