THERMOELECTRIC PROCESSES IN AN EFFICIENT LIGHT-EMITTING TRANSISTOR
Objectives Development of energy-efficient light-emitting bipolar semiconductor structures.Method A method for transforming thermoelectric heat in bipolar semiconductor structures into optical-range electromagnetic radiation, which preserves the cooling effect on thermoelectric transitions, is prop...
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Format: | Article |
Language: | Russian |
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Dagestan State Technical University
2019-11-01
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Series: | Вестник Дагестанского государственного технического университета: Технические науки |
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Online Access: | https://vestnik.dgtu.ru/jour/article/view/688 |
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author | H. M. Gadzhiev M. E. Akhmedov S. M. Gadzhieva P. A. Kurbanova |
author_facet | H. M. Gadzhiev M. E. Akhmedov S. M. Gadzhieva P. A. Kurbanova |
author_sort | H. M. Gadzhiev |
collection | DOAJ |
description | Objectives Development of energy-efficient light-emitting bipolar semiconductor structures.Method A method for transforming thermoelectric heat in bipolar semiconductor structures into optical-range electromagnetic radiation, which preserves the cooling effect on thermoelectric transitions, is proposed. Instead of transferring the information impulse electrically from the baseemitter light-emitting transition, the information is transferred directly to the light-absorbing basecollector transition by photons or following multiple re-reflections from mirror metal electrodes.Results Unlike conventional optocouplers discretely separated in space, the novel optocouplers described in the article are integrated into a single electronic component using the principle of LED radiation. As a result, light-emitting bipolar semiconductor structures will result in the creation of more powerful, faster and better integrated devices.Conclusion Light-emitting bipolar semiconductor structures will not only increase the reliability of electronic components across a wide range of performance characteristics, but also increase energy efficiency through the use of optical radiation recovery. The future development of light-efficient transistors improves integration and increases processor performance, at the same time as reducing the power consumption of the cooling system and the power supply of the device itself. |
first_indexed | 2024-03-12T04:28:22Z |
format | Article |
id | doaj.art-f71941e4394f44f7aa601e1096923ecc |
institution | Directory Open Access Journal |
issn | 2073-6185 2542-095X |
language | Russian |
last_indexed | 2025-03-14T09:19:40Z |
publishDate | 2019-11-01 |
publisher | Dagestan State Technical University |
record_format | Article |
series | Вестник Дагестанского государственного технического университета: Технические науки |
spelling | doaj.art-f71941e4394f44f7aa601e1096923ecc2025-03-02T11:46:06ZrusDagestan State Technical UniversityВестник Дагестанского государственного технического университета: Технические науки2073-61852542-095X2019-11-0146381910.21822/2073-6185-2019-46-3-8-19521THERMOELECTRIC PROCESSES IN AN EFFICIENT LIGHT-EMITTING TRANSISTORH. M. Gadzhiev0M. E. Akhmedov1S. M. Gadzhieva2P. A. Kurbanova3Daghestan State Technical UniversityDaghestan State Technical UniversityDaghestan State Technical UniversityDaghestan State Technical UniversityObjectives Development of energy-efficient light-emitting bipolar semiconductor structures.Method A method for transforming thermoelectric heat in bipolar semiconductor structures into optical-range electromagnetic radiation, which preserves the cooling effect on thermoelectric transitions, is proposed. Instead of transferring the information impulse electrically from the baseemitter light-emitting transition, the information is transferred directly to the light-absorbing basecollector transition by photons or following multiple re-reflections from mirror metal electrodes.Results Unlike conventional optocouplers discretely separated in space, the novel optocouplers described in the article are integrated into a single electronic component using the principle of LED radiation. As a result, light-emitting bipolar semiconductor structures will result in the creation of more powerful, faster and better integrated devices.Conclusion Light-emitting bipolar semiconductor structures will not only increase the reliability of electronic components across a wide range of performance characteristics, but also increase energy efficiency through the use of optical radiation recovery. The future development of light-efficient transistors improves integration and increases processor performance, at the same time as reducing the power consumption of the cooling system and the power supply of the device itself.https://vestnik.dgtu.ru/jour/article/view/688light-emitting bipolar semiconductor structuresoptical radiationrecoveryenergy-efficiencymirror electrode |
spellingShingle | H. M. Gadzhiev M. E. Akhmedov S. M. Gadzhieva P. A. Kurbanova THERMOELECTRIC PROCESSES IN AN EFFICIENT LIGHT-EMITTING TRANSISTOR Вестник Дагестанского государственного технического университета: Технические науки light-emitting bipolar semiconductor structures optical radiation recovery energy-efficiency mirror electrode |
title | THERMOELECTRIC PROCESSES IN AN EFFICIENT LIGHT-EMITTING TRANSISTOR |
title_full | THERMOELECTRIC PROCESSES IN AN EFFICIENT LIGHT-EMITTING TRANSISTOR |
title_fullStr | THERMOELECTRIC PROCESSES IN AN EFFICIENT LIGHT-EMITTING TRANSISTOR |
title_full_unstemmed | THERMOELECTRIC PROCESSES IN AN EFFICIENT LIGHT-EMITTING TRANSISTOR |
title_short | THERMOELECTRIC PROCESSES IN AN EFFICIENT LIGHT-EMITTING TRANSISTOR |
title_sort | thermoelectric processes in an efficient light emitting transistor |
topic | light-emitting bipolar semiconductor structures optical radiation recovery energy-efficiency mirror electrode |
url | https://vestnik.dgtu.ru/jour/article/view/688 |
work_keys_str_mv | AT hmgadzhiev thermoelectricprocessesinanefficientlightemittingtransistor AT meakhmedov thermoelectricprocessesinanefficientlightemittingtransistor AT smgadzhieva thermoelectricprocessesinanefficientlightemittingtransistor AT pakurbanova thermoelectricprocessesinanefficientlightemittingtransistor |