Investigation of thermometrical characteristics of p+–n-GaP diodes

Investigation of thermometrical characteristics of p+–n-GaP diodes

The method of reception of p+–n-diode epitaxial structures of GaP from liquid phase is developed. In the temperature range of 80—520 K thermometric and current-voltage characteristics of test models of diode temperature sensors are measured and their basic technical parameters are determined. Perspe...

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Bibliographic Details
Main Authors: Sypko N. I., Shutov S. V., Fonkich A. М., Kopko D. P., Shwarts М. M., Shwarts Yu. M., Krasnov V. A., Erohin S. Yu.
Format: Article
Language:English
Published: Politehperiodika 2008-12-01
Series:Tekhnologiya i Konstruirovanie v Elektronnoi Apparature
Subjects:
sensor
temperature
diode
GaP
Online Access:http://www.tkea.com.ua/tkea/2008/6_2008/pdf/07.zip

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