Performance Improvement in DRAM Cell Using Novel Nitride/Metal Spacers Structure
In this paper, a novel structure of DRAM (Dynamic Random Access Memory) cell transistor which has new spacer structure of nitride/metal is investigated using 3-D technology computer-aided design simulation. When the nitride/metal spacer structure is used in a DRAM cell, the retention time increases...
| Main Authors: | , , |
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| פורמט: | Article |
| שפה: | English |
| יצא לאור: |
IEEE
2024-01-01
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| סדרה: | IEEE Access |
| נושאים: | |
| גישה מקוונת: | https://ieeexplore.ieee.org/document/10716478/ |