| Summary: | Multi-channel FinFET (<inline-formula> <tex-math notation="LaTeX">$\text{M}_{\textbf {ch}}$ </tex-math></inline-formula>-FinFET) is an emerging device having promising use due to its excellent driving capability. In this paper, we have investigated the significance of multiple channels of FinFET configuration. We have examined the performance of the multi-channel-based step FinFET (<inline-formula> <tex-math notation="LaTeX">$\text{M}_{\textbf {ch}}$ </tex-math></inline-formula>- step FinFET) structure with spacer engineering. The results obtained from this simulation work indicate that <inline-formula> <tex-math notation="LaTeX">$\text{M}_{\textbf {ch}}$ </tex-math></inline-formula>-step FinFET is a good competitor for future improvisation of CMOS technology. The proposed device has improved drain conductivity, transconductance (<inline-formula> <tex-math notation="LaTeX">${\textbf G_{m}}$ </tex-math></inline-formula>), intrinsic gain (<inline-formula> <tex-math notation="LaTeX">${\textbf A_{v}}$ </tex-math></inline-formula>), and drain conductance (<inline-formula> <tex-math notation="LaTeX">${\textbf G_{d}}$ </tex-math></inline-formula>) performance by introducing high-K dielectric spacer material by 38.2%, 46.12%, 88.57%, and 22.55%, respectively. The proposed device with a spacer is preferable to obtain better performance regarding ON current and device efficiency.
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