Multi-Channel Step FinFET With Spacer Engineering
Multi-channel FinFET (<inline-formula> <tex-math notation="LaTeX">$\text{M}_{\textbf {ch}}$ </tex-math></inline-formula>-FinFET) is an emerging device having promising use due to its excellent driving capability. In this paper, we have investigated the significance...
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2024-01-01
|
| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10373010/ |
| _version_ | 1827391401630892032 |
|---|---|
| author | Rinku Rani Das Alex James |
| author_facet | Rinku Rani Das Alex James |
| author_sort | Rinku Rani Das |
| collection | DOAJ |
| description | Multi-channel FinFET (<inline-formula> <tex-math notation="LaTeX">$\text{M}_{\textbf {ch}}$ </tex-math></inline-formula>-FinFET) is an emerging device having promising use due to its excellent driving capability. In this paper, we have investigated the significance of multiple channels of FinFET configuration. We have examined the performance of the multi-channel-based step FinFET (<inline-formula> <tex-math notation="LaTeX">$\text{M}_{\textbf {ch}}$ </tex-math></inline-formula>- step FinFET) structure with spacer engineering. The results obtained from this simulation work indicate that <inline-formula> <tex-math notation="LaTeX">$\text{M}_{\textbf {ch}}$ </tex-math></inline-formula>-step FinFET is a good competitor for future improvisation of CMOS technology. The proposed device has improved drain conductivity, transconductance (<inline-formula> <tex-math notation="LaTeX">${\textbf G_{m}}$ </tex-math></inline-formula>), intrinsic gain (<inline-formula> <tex-math notation="LaTeX">${\textbf A_{v}}$ </tex-math></inline-formula>), and drain conductance (<inline-formula> <tex-math notation="LaTeX">${\textbf G_{d}}$ </tex-math></inline-formula>) performance by introducing high-K dielectric spacer material by 38.2%, 46.12%, 88.57%, and 22.55%, respectively. The proposed device with a spacer is preferable to obtain better performance regarding ON current and device efficiency. |
| first_indexed | 2024-03-08T17:10:22Z |
| format | Article |
| id | doaj.art-f7fd11d1dcfc41b8a302f2e7e9a33090 |
| institution | Directory Open Access Journal |
| issn | 2169-3536 |
| language | English |
| last_indexed | 2024-03-08T17:10:22Z |
| publishDate | 2024-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Access |
| spelling | doaj.art-f7fd11d1dcfc41b8a302f2e7e9a330902024-01-04T00:01:51ZengIEEEIEEE Access2169-35362024-01-011246247010.1109/ACCESS.2023.334652210373010Multi-Channel Step FinFET With Spacer EngineeringRinku Rani Das0https://orcid.org/0000-0001-8016-7481Alex James1https://orcid.org/0000-0001-5655-1213School of Electronic Systems and Automation, Digital University Kerala, Trivandrum, IndiaSchool of Electronic Systems and Automation, Digital University Kerala, Trivandrum, IndiaMulti-channel FinFET (<inline-formula> <tex-math notation="LaTeX">$\text{M}_{\textbf {ch}}$ </tex-math></inline-formula>-FinFET) is an emerging device having promising use due to its excellent driving capability. In this paper, we have investigated the significance of multiple channels of FinFET configuration. We have examined the performance of the multi-channel-based step FinFET (<inline-formula> <tex-math notation="LaTeX">$\text{M}_{\textbf {ch}}$ </tex-math></inline-formula>- step FinFET) structure with spacer engineering. The results obtained from this simulation work indicate that <inline-formula> <tex-math notation="LaTeX">$\text{M}_{\textbf {ch}}$ </tex-math></inline-formula>-step FinFET is a good competitor for future improvisation of CMOS technology. The proposed device has improved drain conductivity, transconductance (<inline-formula> <tex-math notation="LaTeX">${\textbf G_{m}}$ </tex-math></inline-formula>), intrinsic gain (<inline-formula> <tex-math notation="LaTeX">${\textbf A_{v}}$ </tex-math></inline-formula>), and drain conductance (<inline-formula> <tex-math notation="LaTeX">${\textbf G_{d}}$ </tex-math></inline-formula>) performance by introducing high-K dielectric spacer material by 38.2%, 46.12%, 88.57%, and 22.55%, respectively. The proposed device with a spacer is preferable to obtain better performance regarding ON current and device efficiency.https://ieeexplore.ieee.org/document/10373010/Semiconductor deviceshort channel effect (SCE)subthreshold swing (SS)bipolar junction transistor (BJT) |
| spellingShingle | Rinku Rani Das Alex James Multi-Channel Step FinFET With Spacer Engineering IEEE Access Semiconductor device short channel effect (SCE) subthreshold swing (SS) bipolar junction transistor (BJT) |
| title | Multi-Channel Step FinFET With Spacer Engineering |
| title_full | Multi-Channel Step FinFET With Spacer Engineering |
| title_fullStr | Multi-Channel Step FinFET With Spacer Engineering |
| title_full_unstemmed | Multi-Channel Step FinFET With Spacer Engineering |
| title_short | Multi-Channel Step FinFET With Spacer Engineering |
| title_sort | multi channel step finfet with spacer engineering |
| topic | Semiconductor device short channel effect (SCE) subthreshold swing (SS) bipolar junction transistor (BJT) |
| url | https://ieeexplore.ieee.org/document/10373010/ |
| work_keys_str_mv | AT rinkuranidas multichannelstepfinfetwithspacerengineering AT alexjames multichannelstepfinfetwithspacerengineering |