Development and Research of a Theoretical Model of the Magnetic Tunnel Junction
Spin-dependent tunneling structures are widely used in many spintronic devices and sensors. This paper describes the magnetic tunnel junction (MTJ) characteristics caused by the inhomogeneous magnetic field of ferromagnetic layers. The extremely oblate magnetic ellipsoids have been used to mimic the...
Main Authors: | , , , , , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2021-03-01
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Series: | Sensors |
Subjects: | |
Online Access: | https://www.mdpi.com/1424-8220/21/6/2118 |
Summary: | Spin-dependent tunneling structures are widely used in many spintronic devices and sensors. This paper describes the magnetic tunnel junction (MTJ) characteristics caused by the inhomogeneous magnetic field of ferromagnetic layers. The extremely oblate magnetic ellipsoids have been used to mimic these layers. The strong effect of an inhomogeneous magnetic field on the magnetoresistive layers’ interaction was demonstrated. The magnetostatic coupling coefficient is also calculated. |
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ISSN: | 1424-8220 |