Cobalt Oxide-Decorated Silicon Carbide Nano-Tree Array Electrode for Micro-Supercapacitor Application
A cobalt oxide (Co<sub>3</sub>O<sub>4</sub>)-decorated silicon carbide (SiC) nano-tree array (denoted as Co<sub>3</sub>O<sub>4</sub>/SiC NTA) electrode is synthesized, and it is investigated for use in micro-supercapacitor applications. Firstly, the we...
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MDPI AG
2021-08-01
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| Online Access: | https://www.mdpi.com/1996-1944/14/16/4514 |
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| author | Chuan-Pei Lee Bayu-Tri Murti Po-Kang Yang Francesca Rossi Carlo Carraro Roya Maboudian |
| author_facet | Chuan-Pei Lee Bayu-Tri Murti Po-Kang Yang Francesca Rossi Carlo Carraro Roya Maboudian |
| author_sort | Chuan-Pei Lee |
| collection | DOAJ |
| description | A cobalt oxide (Co<sub>3</sub>O<sub>4</sub>)-decorated silicon carbide (SiC) nano-tree array (denoted as Co<sub>3</sub>O<sub>4</sub>/SiC NTA) electrode is synthesized, and it is investigated for use in micro-supercapacitor applications. Firstly, the well-standing SiC nanowires (NWs) are prepared by nickel (Ni)-catalyzed chemical vapor deposition (CVD) method, and then the thin layer of Co<sub>3</sub>O<sub>4</sub> and the hierarchical Co<sub>3</sub>O<sub>4</sub> nano-flower-clusters are, respectively, fabricated on the side-walls and the top side of the SiC NWs via electrodeposition. The deposition of Co<sub>3</sub>O<sub>4</sub> on the SiC NWs benefits the charge transfer at the electrode/aqueous electrolyte interface due to its extremely hydrophilic surface characteristic after Co<sub>3</sub>O<sub>4</sub> decoration. Furthermore, the Co<sub>3</sub>O<sub>4</sub>/SiC NTA electrode provides a directional charge transport route along the length of SiC nanowires owing to their well-standing architecture. By using the Co<sub>3</sub>O<sub>4</sub>/SiC NTA electrode for micro-supercapacitor application, the areal capacitance obtained from cyclic voltammetry measurement reaches 845 mF cm<sup>−2</sup> at a 10 mV s<sup>−1</sup> scan rate. Finally, the capacitance durability is also evaluated by the cycling test of cyclic voltammetry at a high scan rate of 150 mV s<sup>−1</sup> for 2000 cycles, exhibiting excellent stability. |
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| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-10T08:39:35Z |
| publishDate | 2021-08-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Materials |
| spelling | doaj.art-f8323807871441dbb0c030bcc504a6942023-11-22T08:28:39ZengMDPI AGMaterials1996-19442021-08-011416451410.3390/ma14164514Cobalt Oxide-Decorated Silicon Carbide Nano-Tree Array Electrode for Micro-Supercapacitor ApplicationChuan-Pei Lee0Bayu-Tri Murti1Po-Kang Yang2Francesca Rossi3Carlo Carraro4Roya Maboudian5Department of Applied Physics and Chemistry, University of Taipei, Taipei 10048, TaiwanDepartment of Applied Physics and Chemistry, University of Taipei, Taipei 10048, TaiwanDepartment of Biomedical Sciences and Engineering, National Central University, Chung-li 32001, TaiwanIMEM-CNR Institute, Parco Area delle Scienze 37/A, 43124 Parma, ItalyBerkeley Sensor & Actuator Center, Department of Chemical and Biomolecular Engineering, University of California, Berkeley, CA 94720, USABerkeley Sensor & Actuator Center, Department of Chemical and Biomolecular Engineering, University of California, Berkeley, CA 94720, USAA cobalt oxide (Co<sub>3</sub>O<sub>4</sub>)-decorated silicon carbide (SiC) nano-tree array (denoted as Co<sub>3</sub>O<sub>4</sub>/SiC NTA) electrode is synthesized, and it is investigated for use in micro-supercapacitor applications. Firstly, the well-standing SiC nanowires (NWs) are prepared by nickel (Ni)-catalyzed chemical vapor deposition (CVD) method, and then the thin layer of Co<sub>3</sub>O<sub>4</sub> and the hierarchical Co<sub>3</sub>O<sub>4</sub> nano-flower-clusters are, respectively, fabricated on the side-walls and the top side of the SiC NWs via electrodeposition. The deposition of Co<sub>3</sub>O<sub>4</sub> on the SiC NWs benefits the charge transfer at the electrode/aqueous electrolyte interface due to its extremely hydrophilic surface characteristic after Co<sub>3</sub>O<sub>4</sub> decoration. Furthermore, the Co<sub>3</sub>O<sub>4</sub>/SiC NTA electrode provides a directional charge transport route along the length of SiC nanowires owing to their well-standing architecture. By using the Co<sub>3</sub>O<sub>4</sub>/SiC NTA electrode for micro-supercapacitor application, the areal capacitance obtained from cyclic voltammetry measurement reaches 845 mF cm<sup>−2</sup> at a 10 mV s<sup>−1</sup> scan rate. Finally, the capacitance durability is also evaluated by the cycling test of cyclic voltammetry at a high scan rate of 150 mV s<sup>−1</sup> for 2000 cycles, exhibiting excellent stability.https://www.mdpi.com/1996-1944/14/16/4514chemical vapor depositioncobalt oxidemicro-supercapacitornanowiresilicon carbide |
| spellingShingle | Chuan-Pei Lee Bayu-Tri Murti Po-Kang Yang Francesca Rossi Carlo Carraro Roya Maboudian Cobalt Oxide-Decorated Silicon Carbide Nano-Tree Array Electrode for Micro-Supercapacitor Application Materials chemical vapor deposition cobalt oxide micro-supercapacitor nanowire silicon carbide |
| title | Cobalt Oxide-Decorated Silicon Carbide Nano-Tree Array Electrode for Micro-Supercapacitor Application |
| title_full | Cobalt Oxide-Decorated Silicon Carbide Nano-Tree Array Electrode for Micro-Supercapacitor Application |
| title_fullStr | Cobalt Oxide-Decorated Silicon Carbide Nano-Tree Array Electrode for Micro-Supercapacitor Application |
| title_full_unstemmed | Cobalt Oxide-Decorated Silicon Carbide Nano-Tree Array Electrode for Micro-Supercapacitor Application |
| title_short | Cobalt Oxide-Decorated Silicon Carbide Nano-Tree Array Electrode for Micro-Supercapacitor Application |
| title_sort | cobalt oxide decorated silicon carbide nano tree array electrode for micro supercapacitor application |
| topic | chemical vapor deposition cobalt oxide micro-supercapacitor nanowire silicon carbide |
| url | https://www.mdpi.com/1996-1944/14/16/4514 |
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