2D BP/InSe Heterostructures as a Nonlinear Optical Material for Ultrafast Photonics
The BP/InSe heterojunction has attracted the attention of many fields in successful combined high hole mobility of black phosphorus (BP) and high electron mobility of indium selenide (InSe), and enhanced the environmental stability of BP. Nevertheless, photonics research on the BP/InSe heterostructu...
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| Format: | Article |
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MDPI AG
2022-05-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/12/11/1809 |
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| author | Yiqing Shu Zijun Zhong Chunyang Ma Penglai Guo Leiming Wu Zhitao Lin Xun Yuan Jianqing Li Weicheng Chen Quanlan Xiao |
| author_facet | Yiqing Shu Zijun Zhong Chunyang Ma Penglai Guo Leiming Wu Zhitao Lin Xun Yuan Jianqing Li Weicheng Chen Quanlan Xiao |
| author_sort | Yiqing Shu |
| collection | DOAJ |
| description | The BP/InSe heterojunction has attracted the attention of many fields in successful combined high hole mobility of black phosphorus (BP) and high electron mobility of indium selenide (InSe), and enhanced the environmental stability of BP. Nevertheless, photonics research on the BP/InSe heterostructure was insufficient, while both components are considered promising in the field. In this work, a two-dimensional (2D) BP/InSe heterostructure was fabricated using the liquid-phase exfoliation method. Its linear and non-linear optical (NLO) absorption was characterized by ultraviolet−visible−infrared and Open-aperture Z-scan technology. On account of the revealed superior NLO properties, an SA based on 2D BP/InSe was prepared and embedded into an erbium-doped fiber laser, traditional soliton pulses were observed at 1.5 μm with the pulse duration of 881 fs. Furthermore, harmonic mode locking of bound solitons and dark-bright soliton pairs were also obtained in the same laser cavity due to the cross-coupling effect. The stable mode-locked operation can be maintained for several days, which overcome the low air stability of BP. This contribution further proves the excellent optical properties of 2D BP/InSe heterostructure and provides new probability of developing nano-photonics devices for the applications of double pulses laser source and long-distance information transmission. |
| first_indexed | 2024-03-10T01:03:05Z |
| format | Article |
| id | doaj.art-f84396cfd6da4e16a13c7637779a5f2a |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-10T01:03:05Z |
| publishDate | 2022-05-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-f84396cfd6da4e16a13c7637779a5f2a2023-11-23T14:32:37ZengMDPI AGNanomaterials2079-49912022-05-011211180910.3390/nano121118092D BP/InSe Heterostructures as a Nonlinear Optical Material for Ultrafast PhotonicsYiqing Shu0Zijun Zhong1Chunyang Ma2Penglai Guo3Leiming Wu4Zhitao Lin5Xun Yuan6Jianqing Li7Weicheng Chen8Quanlan Xiao9School of Computer Science and Engineering, Macau University of Science and Technology, Avenida Wai Long, Taipa, Macao 591020, ChinaInternational Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, ChinaResearch Center of Circuits and Systems, Peng Cheng Laboratory (PCL), Shenzhen 518055, ChinaSchool of Computer Science and Engineering, Macau University of Science and Technology, Avenida Wai Long, Taipa, Macao 591020, ChinaInstitute of Advanced Photonics Technology, School of Information Engineering, Guangdong University of Technology, Guangzhou 510006, ChinaSchool of Computer Science and Engineering, Macau University of Science and Technology, Avenida Wai Long, Taipa, Macao 591020, ChinaSchool of Computer Science and Engineering, Macau University of Science and Technology, Avenida Wai Long, Taipa, Macao 591020, ChinaSchool of Computer Science and Engineering, Macau University of Science and Technology, Avenida Wai Long, Taipa, Macao 591020, ChinaSchool of Physics and Optoelectronic Engineering, Foshan University, Foshan 528225, ChinaInternational Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, ChinaThe BP/InSe heterojunction has attracted the attention of many fields in successful combined high hole mobility of black phosphorus (BP) and high electron mobility of indium selenide (InSe), and enhanced the environmental stability of BP. Nevertheless, photonics research on the BP/InSe heterostructure was insufficient, while both components are considered promising in the field. In this work, a two-dimensional (2D) BP/InSe heterostructure was fabricated using the liquid-phase exfoliation method. Its linear and non-linear optical (NLO) absorption was characterized by ultraviolet−visible−infrared and Open-aperture Z-scan technology. On account of the revealed superior NLO properties, an SA based on 2D BP/InSe was prepared and embedded into an erbium-doped fiber laser, traditional soliton pulses were observed at 1.5 μm with the pulse duration of 881 fs. Furthermore, harmonic mode locking of bound solitons and dark-bright soliton pairs were also obtained in the same laser cavity due to the cross-coupling effect. The stable mode-locked operation can be maintained for several days, which overcome the low air stability of BP. This contribution further proves the excellent optical properties of 2D BP/InSe heterostructure and provides new probability of developing nano-photonics devices for the applications of double pulses laser source and long-distance information transmission.https://www.mdpi.com/2079-4991/12/11/1809BPInSeheterostructureLPEnonlinear optical responsesultrafast photonics application |
| spellingShingle | Yiqing Shu Zijun Zhong Chunyang Ma Penglai Guo Leiming Wu Zhitao Lin Xun Yuan Jianqing Li Weicheng Chen Quanlan Xiao 2D BP/InSe Heterostructures as a Nonlinear Optical Material for Ultrafast Photonics Nanomaterials BP InSe heterostructure LPE nonlinear optical responses ultrafast photonics application |
| title | 2D BP/InSe Heterostructures as a Nonlinear Optical Material for Ultrafast Photonics |
| title_full | 2D BP/InSe Heterostructures as a Nonlinear Optical Material for Ultrafast Photonics |
| title_fullStr | 2D BP/InSe Heterostructures as a Nonlinear Optical Material for Ultrafast Photonics |
| title_full_unstemmed | 2D BP/InSe Heterostructures as a Nonlinear Optical Material for Ultrafast Photonics |
| title_short | 2D BP/InSe Heterostructures as a Nonlinear Optical Material for Ultrafast Photonics |
| title_sort | 2d bp inse heterostructures as a nonlinear optical material for ultrafast photonics |
| topic | BP InSe heterostructure LPE nonlinear optical responses ultrafast photonics application |
| url | https://www.mdpi.com/2079-4991/12/11/1809 |
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