Simplification of selective imaging of dislocation loops: diffraction-selected on-zone STEM

ABSTRACTContrary to the conventional belief that, in transmission electron microscopy (TEM), selective and sharp imaging of dislocation loops can be realized only by accurate tilting of a specimen from the condition that the symmetrical axis of incident electron beam distribution is parallel to a zo...

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Main Authors: Masaya Kozuka, Yuichi Miyahara, Tomohiro Kobayashi
Format: Article
Language:English
Published: Taylor & Francis Group 2024-12-01
Series:Philosophical Magazine Letters
Subjects:
Online Access:https://www.tandfonline.com/doi/10.1080/09500839.2024.2321134
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author Masaya Kozuka
Yuichi Miyahara
Tomohiro Kobayashi
author_facet Masaya Kozuka
Yuichi Miyahara
Tomohiro Kobayashi
author_sort Masaya Kozuka
collection DOAJ
description ABSTRACTContrary to the conventional belief that, in transmission electron microscopy (TEM), selective and sharp imaging of dislocation loops can be realized only by accurate tilting of a specimen from the condition that the symmetrical axis of incident electron beam distribution is parallel to a zone axis of the TEM specimen (on-zone condition), we demonstrate that selective dark-field (DF) imaging of dislocation loops at on-zone condition is possible with a scanning TEM (STEM) mode that uses an objective lens aperture to select a diffraction disk of interest. Diffraction-selected on-zone STEM (DsoZ-STEM) has been applied to selective DF imaging of dislocation loops with a short axis length of <2 nm in a single-crystal aluminum irradiated by argon ions and an electron beam at room temperature. It was found that a Kikuchi line enhances the contrast among the dislocation loops and the matrix of DsoZ-STEM images. DsoZ-STEM obeyed g·b invisibility criterion and showed good agreement with a typical visibility change of a dislocation line and a loop in conventional DF images with a specific pair of [Formula: see text]g. In addition, dislocation loops always showed much higher brightness in the inner side compared to the outer side in DsoZ-STEM images, simplifying the distinction of dislocation loops with apparently the same long-axis direction but different b. Thus, DsoZ-STEM can simplify the selective DF imaging for the determination of the number and the character of dislocation loops.
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spelling doaj.art-f84c621bb3084882a2a088155b0527562024-02-29T12:00:04ZengTaylor & Francis GroupPhilosophical Magazine Letters0950-08391362-30362024-12-01104110.1080/09500839.2024.2321134Simplification of selective imaging of dislocation loops: diffraction-selected on-zone STEMMasaya Kozuka0Yuichi Miyahara1Tomohiro Kobayashi2Energy Transformation Research Laboratory, Central Research Institute of Electric Power Industry, Yokosuka, JapanEnergy Transformation Research Laboratory, Central Research Institute of Electric Power Industry, Yokosuka, JapanEnergy Transformation Research Laboratory, Central Research Institute of Electric Power Industry, Yokosuka, JapanABSTRACTContrary to the conventional belief that, in transmission electron microscopy (TEM), selective and sharp imaging of dislocation loops can be realized only by accurate tilting of a specimen from the condition that the symmetrical axis of incident electron beam distribution is parallel to a zone axis of the TEM specimen (on-zone condition), we demonstrate that selective dark-field (DF) imaging of dislocation loops at on-zone condition is possible with a scanning TEM (STEM) mode that uses an objective lens aperture to select a diffraction disk of interest. Diffraction-selected on-zone STEM (DsoZ-STEM) has been applied to selective DF imaging of dislocation loops with a short axis length of <2 nm in a single-crystal aluminum irradiated by argon ions and an electron beam at room temperature. It was found that a Kikuchi line enhances the contrast among the dislocation loops and the matrix of DsoZ-STEM images. DsoZ-STEM obeyed g·b invisibility criterion and showed good agreement with a typical visibility change of a dislocation line and a loop in conventional DF images with a specific pair of [Formula: see text]g. In addition, dislocation loops always showed much higher brightness in the inner side compared to the outer side in DsoZ-STEM images, simplifying the distinction of dislocation loops with apparently the same long-axis direction but different b. Thus, DsoZ-STEM can simplify the selective DF imaging for the determination of the number and the character of dislocation loops.https://www.tandfonline.com/doi/10.1080/09500839.2024.2321134STEMdislocation loopsdiffraction contrastirradiation damage
spellingShingle Masaya Kozuka
Yuichi Miyahara
Tomohiro Kobayashi
Simplification of selective imaging of dislocation loops: diffraction-selected on-zone STEM
Philosophical Magazine Letters
STEM
dislocation loops
diffraction contrast
irradiation damage
title Simplification of selective imaging of dislocation loops: diffraction-selected on-zone STEM
title_full Simplification of selective imaging of dislocation loops: diffraction-selected on-zone STEM
title_fullStr Simplification of selective imaging of dislocation loops: diffraction-selected on-zone STEM
title_full_unstemmed Simplification of selective imaging of dislocation loops: diffraction-selected on-zone STEM
title_short Simplification of selective imaging of dislocation loops: diffraction-selected on-zone STEM
title_sort simplification of selective imaging of dislocation loops diffraction selected on zone stem
topic STEM
dislocation loops
diffraction contrast
irradiation damage
url https://www.tandfonline.com/doi/10.1080/09500839.2024.2321134
work_keys_str_mv AT masayakozuka simplificationofselectiveimagingofdislocationloopsdiffractionselectedonzonestem
AT yuichimiyahara simplificationofselectiveimagingofdislocationloopsdiffractionselectedonzonestem
AT tomohirokobayashi simplificationofselectiveimagingofdislocationloopsdiffractionselectedonzonestem