Recent progress in thermoelectric layered cobalt oxide thin films

Abstract Oxide-based thermoelectric materials that show a high figure of merit are promising because of their good chemical and thermal stabilities and their relative harmlessness compared with chalcogenide-based state-of-the-art thermoelectric materials. Although several high-ZT thermoelectric oxid...

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Main Authors: Yuqiao Zhang, Hiromichi Ohta
Format: Article
Language:English
Published: Nature Portfolio 2023-12-01
Series:NPG Asia Materials
Online Access:https://doi.org/10.1038/s41427-023-00520-w
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author Yuqiao Zhang
Hiromichi Ohta
author_facet Yuqiao Zhang
Hiromichi Ohta
author_sort Yuqiao Zhang
collection DOAJ
description Abstract Oxide-based thermoelectric materials that show a high figure of merit are promising because of their good chemical and thermal stabilities and their relative harmlessness compared with chalcogenide-based state-of-the-art thermoelectric materials. Although several high-ZT thermoelectric oxides (ZT > 1) have been reported thus far, their reliability levels are low due to the lack of careful observations of their stabilities at elevated temperatures. Herein, we review the epitaxial film growth and thermoelectric properties of representative p-type layered cobalt oxides: Na3/4CoO2, Ca1/3CoO2, Sr1/3CoO2, Ba1/3CoO2, and Ca3Co4O9. Among these specimens, Ba1/3CoO2 and Ca3Co4O9 are stable in air at elevated temperatures (~600 °C). The ZT of Ba1/3CoO2 reaches ~ 0.55 at 600 °C in air, which is reliable and the highest among thermoelectric oxides. Moreover, this value is comparable to those of p-type PbTe and p-type SiGe.
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spelling doaj.art-f89149c6d4754b6194720f24f6ca34162024-03-05T19:29:27ZengNature PortfolioNPG Asia Materials1884-40572023-12-011511910.1038/s41427-023-00520-wRecent progress in thermoelectric layered cobalt oxide thin filmsYuqiao Zhang0Hiromichi Ohta1Institute of Quantum and Sustainable Technology (IQST), School of Chemistry and Chemical Engineering, Jiangsu UniversityResearch Institute for Electronic Science, Hokkaido University, N20W10, KitaAbstract Oxide-based thermoelectric materials that show a high figure of merit are promising because of their good chemical and thermal stabilities and their relative harmlessness compared with chalcogenide-based state-of-the-art thermoelectric materials. Although several high-ZT thermoelectric oxides (ZT > 1) have been reported thus far, their reliability levels are low due to the lack of careful observations of their stabilities at elevated temperatures. Herein, we review the epitaxial film growth and thermoelectric properties of representative p-type layered cobalt oxides: Na3/4CoO2, Ca1/3CoO2, Sr1/3CoO2, Ba1/3CoO2, and Ca3Co4O9. Among these specimens, Ba1/3CoO2 and Ca3Co4O9 are stable in air at elevated temperatures (~600 °C). The ZT of Ba1/3CoO2 reaches ~ 0.55 at 600 °C in air, which is reliable and the highest among thermoelectric oxides. Moreover, this value is comparable to those of p-type PbTe and p-type SiGe.https://doi.org/10.1038/s41427-023-00520-w
spellingShingle Yuqiao Zhang
Hiromichi Ohta
Recent progress in thermoelectric layered cobalt oxide thin films
NPG Asia Materials
title Recent progress in thermoelectric layered cobalt oxide thin films
title_full Recent progress in thermoelectric layered cobalt oxide thin films
title_fullStr Recent progress in thermoelectric layered cobalt oxide thin films
title_full_unstemmed Recent progress in thermoelectric layered cobalt oxide thin films
title_short Recent progress in thermoelectric layered cobalt oxide thin films
title_sort recent progress in thermoelectric layered cobalt oxide thin films
url https://doi.org/10.1038/s41427-023-00520-w
work_keys_str_mv AT yuqiaozhang recentprogressinthermoelectriclayeredcobaltoxidethinfilms
AT hiromichiohta recentprogressinthermoelectriclayeredcobaltoxidethinfilms