Recent progress in thermoelectric layered cobalt oxide thin films
Abstract Oxide-based thermoelectric materials that show a high figure of merit are promising because of their good chemical and thermal stabilities and their relative harmlessness compared with chalcogenide-based state-of-the-art thermoelectric materials. Although several high-ZT thermoelectric oxid...
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Format: | Article |
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Nature Portfolio
2023-12-01
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Series: | NPG Asia Materials |
Online Access: | https://doi.org/10.1038/s41427-023-00520-w |
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author | Yuqiao Zhang Hiromichi Ohta |
author_facet | Yuqiao Zhang Hiromichi Ohta |
author_sort | Yuqiao Zhang |
collection | DOAJ |
description | Abstract Oxide-based thermoelectric materials that show a high figure of merit are promising because of their good chemical and thermal stabilities and their relative harmlessness compared with chalcogenide-based state-of-the-art thermoelectric materials. Although several high-ZT thermoelectric oxides (ZT > 1) have been reported thus far, their reliability levels are low due to the lack of careful observations of their stabilities at elevated temperatures. Herein, we review the epitaxial film growth and thermoelectric properties of representative p-type layered cobalt oxides: Na3/4CoO2, Ca1/3CoO2, Sr1/3CoO2, Ba1/3CoO2, and Ca3Co4O9. Among these specimens, Ba1/3CoO2 and Ca3Co4O9 are stable in air at elevated temperatures (~600 °C). The ZT of Ba1/3CoO2 reaches ~ 0.55 at 600 °C in air, which is reliable and the highest among thermoelectric oxides. Moreover, this value is comparable to those of p-type PbTe and p-type SiGe. |
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language | English |
last_indexed | 2024-03-07T14:55:02Z |
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spelling | doaj.art-f89149c6d4754b6194720f24f6ca34162024-03-05T19:29:27ZengNature PortfolioNPG Asia Materials1884-40572023-12-011511910.1038/s41427-023-00520-wRecent progress in thermoelectric layered cobalt oxide thin filmsYuqiao Zhang0Hiromichi Ohta1Institute of Quantum and Sustainable Technology (IQST), School of Chemistry and Chemical Engineering, Jiangsu UniversityResearch Institute for Electronic Science, Hokkaido University, N20W10, KitaAbstract Oxide-based thermoelectric materials that show a high figure of merit are promising because of their good chemical and thermal stabilities and their relative harmlessness compared with chalcogenide-based state-of-the-art thermoelectric materials. Although several high-ZT thermoelectric oxides (ZT > 1) have been reported thus far, their reliability levels are low due to the lack of careful observations of their stabilities at elevated temperatures. Herein, we review the epitaxial film growth and thermoelectric properties of representative p-type layered cobalt oxides: Na3/4CoO2, Ca1/3CoO2, Sr1/3CoO2, Ba1/3CoO2, and Ca3Co4O9. Among these specimens, Ba1/3CoO2 and Ca3Co4O9 are stable in air at elevated temperatures (~600 °C). The ZT of Ba1/3CoO2 reaches ~ 0.55 at 600 °C in air, which is reliable and the highest among thermoelectric oxides. Moreover, this value is comparable to those of p-type PbTe and p-type SiGe.https://doi.org/10.1038/s41427-023-00520-w |
spellingShingle | Yuqiao Zhang Hiromichi Ohta Recent progress in thermoelectric layered cobalt oxide thin films NPG Asia Materials |
title | Recent progress in thermoelectric layered cobalt oxide thin films |
title_full | Recent progress in thermoelectric layered cobalt oxide thin films |
title_fullStr | Recent progress in thermoelectric layered cobalt oxide thin films |
title_full_unstemmed | Recent progress in thermoelectric layered cobalt oxide thin films |
title_short | Recent progress in thermoelectric layered cobalt oxide thin films |
title_sort | recent progress in thermoelectric layered cobalt oxide thin films |
url | https://doi.org/10.1038/s41427-023-00520-w |
work_keys_str_mv | AT yuqiaozhang recentprogressinthermoelectriclayeredcobaltoxidethinfilms AT hiromichiohta recentprogressinthermoelectriclayeredcobaltoxidethinfilms |