X-ray-Induced Scintillation Properties of Nd-Doped Bi<sub>4</sub>Si<sub>3</sub>O<sub>12</sub> Crystals in Visible and Near-Infrared Regions

X-ray-Induced Scintillation Properties of Nd-Doped Bi<sub>4</sub>Si<sub>3</sub>O<sub>12</sub> Crystals in Visible and Near-Infrared Regions

Undoped, 0.5, 1.0, and 2.0% Nd-doped Bi<sub>4</sub>Si<sub>3</sub>O<sub>12</sub> (BSO) crystals were synthesized by the floating zone method. Regarding photoluminescence (PL) properties, all samples had emission peaks due to the 6p–6s transitions of Bi<sup>3+...

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Bibliographic Details
Main Authors:	Kensei Ichiba, Kai Okazaki, Yuma Takebuchi, Takumi Kato, Daisuke Nakauchi, Noriaki Kawaguchi, Takayuki Yanagida
Format:	Article
Language:	English
Published:	MDPI AG 2022-12-01
Series:	Materials
Subjects:	scintillator radiation detection near-infrared luminescence Bi<sub>4</sub>Si<sub>3</sub>O<sub>12</sub>
Online Access:	https://www.mdpi.com/1996-1944/15/24/8784

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