Manipulation of Band Degeneracy and Lattice Strain for Extraordinary PbTe Thermoelectrics
Maximizing band degeneracy and minimizing phonon relaxation time are proven to be successful for advancing thermoelectrics. Alloying with monotellurides has been known to be an effective approach for converging the valence bands of PbTe for electronic improvements, while the lattice thermal conducti...
| Main Authors: | , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
American Association for the Advancement of Science (AAAS)
2020-01-01
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| Series: | Research |
| Online Access: | http://dx.doi.org/10.34133/2020/8151059 |
| _version_ | 1797282597228773376 |
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| author | Yixuan Wu Pengfei Nan Zhiwei Chen Zezhu Zeng Siqi Lin Xinyue Zhang Hongliang Dong Zhiqiang Chen Hongkai Gu Wen Li Yue Chen Binghui Ge Yanzhong Pei |
| author_facet | Yixuan Wu Pengfei Nan Zhiwei Chen Zezhu Zeng Siqi Lin Xinyue Zhang Hongliang Dong Zhiqiang Chen Hongkai Gu Wen Li Yue Chen Binghui Ge Yanzhong Pei |
| author_sort | Yixuan Wu |
| collection | DOAJ |
| description | Maximizing band degeneracy and minimizing phonon relaxation time are proven to be successful for advancing thermoelectrics. Alloying with monotellurides has been known to be an effective approach for converging the valence bands of PbTe for electronic improvements, while the lattice thermal conductivity of the materials remains available room for being further reduced. It is recently revealed that the broadening of phonon dispersion measures the strength of phonon scattering, and lattice dislocations are particularly effective sources for such broadening through lattice strain fluctuations. In this work, a fine control of MnTe and EuTe alloying enables a significant increase in density of electron states near the valence band edge of PbTe due to involvement of multiple transporting bands, while the creation of dense in-grain dislocations leads to an effective broadening in phonon dispersion for reduced phonon lifetime due to the large strain fluctuations of dislocations as confirmed by synchrotron X-ray diffraction. The synergy of both electronic and thermal improvements successfully leads the average thermoelectric figure of merit to be higher than that ever reported for p-type PbTe at working temperatures. |
| first_indexed | 2024-03-07T17:15:22Z |
| format | Article |
| id | doaj.art-f89bc5a5470d45399655fbc8db6c11a7 |
| institution | Directory Open Access Journal |
| issn | 2639-5274 |
| language | English |
| last_indexed | 2024-03-07T17:15:22Z |
| publishDate | 2020-01-01 |
| publisher | American Association for the Advancement of Science (AAAS) |
| record_format | Article |
| series | Research |
| spelling | doaj.art-f89bc5a5470d45399655fbc8db6c11a72024-03-02T23:11:40ZengAmerican Association for the Advancement of Science (AAAS)Research2639-52742020-01-01202010.34133/2020/8151059Manipulation of Band Degeneracy and Lattice Strain for Extraordinary PbTe ThermoelectricsYixuan Wu0Pengfei Nan1Zhiwei Chen2Zezhu Zeng3Siqi Lin4Xinyue Zhang5Hongliang Dong6Zhiqiang Chen7Hongkai Gu8Wen Li9Yue Chen10Binghui Ge11Yanzhong Pei12Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Tongji Univ., 4800 Caoan Rd., Shanghai 201804, ChinaInstitute of Physical Science and Information Technology, Anhui University, Hefei 230601, ChinaInterdisciplinary Materials Research Center, School of Materials Science and Engineering, Tongji Univ., 4800 Caoan Rd., Shanghai 201804, ChinaDepartment of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong SAR, ChinaInterdisciplinary Materials Research Center, School of Materials Science and Engineering, Tongji Univ., 4800 Caoan Rd., Shanghai 201804, ChinaInterdisciplinary Materials Research Center, School of Materials Science and Engineering, Tongji Univ., 4800 Caoan Rd., Shanghai 201804, ChinaCenter for High Pressure Science and Technology Advanced Research, Shanghai 201203, ChinaCenter for High Pressure Science and Technology Advanced Research, Shanghai 201203, ChinaCenter for High Pressure Science and Technology Advanced Research, Shanghai 201203, China; State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, ChinaInterdisciplinary Materials Research Center, School of Materials Science and Engineering, Tongji Univ., 4800 Caoan Rd., Shanghai 201804, ChinaDepartment of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong SAR, ChinaInstitute of Physical Science and Information Technology, Anhui University, Hefei 230601, ChinaInterdisciplinary Materials Research Center, School of Materials Science and Engineering, Tongji Univ., 4800 Caoan Rd., Shanghai 201804, ChinaMaximizing band degeneracy and minimizing phonon relaxation time are proven to be successful for advancing thermoelectrics. Alloying with monotellurides has been known to be an effective approach for converging the valence bands of PbTe for electronic improvements, while the lattice thermal conductivity of the materials remains available room for being further reduced. It is recently revealed that the broadening of phonon dispersion measures the strength of phonon scattering, and lattice dislocations are particularly effective sources for such broadening through lattice strain fluctuations. In this work, a fine control of MnTe and EuTe alloying enables a significant increase in density of electron states near the valence band edge of PbTe due to involvement of multiple transporting bands, while the creation of dense in-grain dislocations leads to an effective broadening in phonon dispersion for reduced phonon lifetime due to the large strain fluctuations of dislocations as confirmed by synchrotron X-ray diffraction. The synergy of both electronic and thermal improvements successfully leads the average thermoelectric figure of merit to be higher than that ever reported for p-type PbTe at working temperatures.http://dx.doi.org/10.34133/2020/8151059 |
| spellingShingle | Yixuan Wu Pengfei Nan Zhiwei Chen Zezhu Zeng Siqi Lin Xinyue Zhang Hongliang Dong Zhiqiang Chen Hongkai Gu Wen Li Yue Chen Binghui Ge Yanzhong Pei Manipulation of Band Degeneracy and Lattice Strain for Extraordinary PbTe Thermoelectrics Research |
| title | Manipulation of Band Degeneracy and Lattice Strain for Extraordinary PbTe Thermoelectrics |
| title_full | Manipulation of Band Degeneracy and Lattice Strain for Extraordinary PbTe Thermoelectrics |
| title_fullStr | Manipulation of Band Degeneracy and Lattice Strain for Extraordinary PbTe Thermoelectrics |
| title_full_unstemmed | Manipulation of Band Degeneracy and Lattice Strain for Extraordinary PbTe Thermoelectrics |
| title_short | Manipulation of Band Degeneracy and Lattice Strain for Extraordinary PbTe Thermoelectrics |
| title_sort | manipulation of band degeneracy and lattice strain for extraordinary pbte thermoelectrics |
| url | http://dx.doi.org/10.34133/2020/8151059 |
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