Performance evaluation of a new 30 μm thick GaAs x-ray detector grown by MBE
A circular mesa (400 μm diameter) GaAs p ^+ -i-n ^+ photodiode with a 30 μm thick i layer was characterized for its performance as a detector in photon counting x-ray spectroscopy at 20 °C. The detector was fabricated from material grown by molecular beam epitaxy (MBE). An earlier MBE-grown detector...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2021-01-01
|
| Series: | Materials Research Express |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2053-1591/abe73c |