Performance evaluation of a new 30 μm thick GaAs x-ray detector grown by MBE
A circular mesa (400 μm diameter) GaAs p ^+ -i-n ^+ photodiode with a 30 μm thick i layer was characterized for its performance as a detector in photon counting x-ray spectroscopy at 20 °C. The detector was fabricated from material grown by molecular beam epitaxy (MBE). An earlier MBE-grown detector...
Main Authors: | G Lioliou, C L Poyser, J Whale, R P Campion, A J Kent, A M Barnett |
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Format: | Article |
Language: | English |
Published: |
IOP Publishing
2021-01-01
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Series: | Materials Research Express |
Subjects: | |
Online Access: | https://doi.org/10.1088/2053-1591/abe73c |
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