Minimisation of Parasitic Capacitance in Lumped-Element Electro-Absorption Modulators for High-Speed Optical Components
This paper presents an investigation into the parasitic capacitance of an RF contact scheme for lumped-element EAMs. Test structures are fabricated to analyse this parasitic capacitance via <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"...
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-07-01
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| Series: | Photonics |
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| Online Access: | https://www.mdpi.com/2304-6732/10/8/885 |
| _version_ | 1797583524116561920 |
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| author | Jack Mulcahy Shengtai Shi Frank H. Peters Xing Dai |
| author_facet | Jack Mulcahy Shengtai Shi Frank H. Peters Xing Dai |
| author_sort | Jack Mulcahy |
| collection | DOAJ |
| description | This paper presents an investigation into the parasitic capacitance of an RF contact scheme for lumped-element EAMs. Test structures are fabricated to analyse this parasitic capacitance via <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>S</mi><mn>11</mn></msub></semantics></math></inline-formula> characterisation using a vector network analyser (VNA). Optimisations of the contact scheme lead to the parasitic capacitance being reduced to <10 fF. EAMs using this contact scheme are fabricated and characterised using <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>S</mi><mn>11</mn></msub></semantics></math></inline-formula> measurements. These <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>S</mi><mn>11</mn></msub></semantics></math></inline-formula> measurements are used to simulate <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>S</mi><mn>21</mn></msub></semantics></math></inline-formula> measurements, which predict a <i>f</i><sub>3dB</sub> bandwidth of near 80 GHz using an equivalent circuit model. |
| first_indexed | 2024-03-10T23:39:09Z |
| format | Article |
| id | doaj.art-f8b2cee976424e3da23d989551237dc3 |
| institution | Directory Open Access Journal |
| issn | 2304-6732 |
| language | English |
| last_indexed | 2024-03-10T23:39:09Z |
| publishDate | 2023-07-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Photonics |
| spelling | doaj.art-f8b2cee976424e3da23d989551237dc32023-11-19T02:39:11ZengMDPI AGPhotonics2304-67322023-07-0110888510.3390/photonics10080885Minimisation of Parasitic Capacitance in Lumped-Element Electro-Absorption Modulators for High-Speed Optical ComponentsJack Mulcahy0Shengtai Shi1Frank H. Peters2Xing Dai3Integrated Photonics Group, Tyndall National Institute, T12 R5CP Cork, IrelandIntegrated Photonics Group, Tyndall National Institute, T12 R5CP Cork, IrelandIntegrated Photonics Group, Tyndall National Institute, T12 R5CP Cork, IrelandIntegrated Photonics Group, Tyndall National Institute, T12 R5CP Cork, IrelandThis paper presents an investigation into the parasitic capacitance of an RF contact scheme for lumped-element EAMs. Test structures are fabricated to analyse this parasitic capacitance via <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>S</mi><mn>11</mn></msub></semantics></math></inline-formula> characterisation using a vector network analyser (VNA). Optimisations of the contact scheme lead to the parasitic capacitance being reduced to <10 fF. EAMs using this contact scheme are fabricated and characterised using <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>S</mi><mn>11</mn></msub></semantics></math></inline-formula> measurements. These <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>S</mi><mn>11</mn></msub></semantics></math></inline-formula> measurements are used to simulate <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>S</mi><mn>21</mn></msub></semantics></math></inline-formula> measurements, which predict a <i>f</i><sub>3dB</sub> bandwidth of near 80 GHz using an equivalent circuit model.https://www.mdpi.com/2304-6732/10/8/885lumped-element electro-absorption modulatorsradio-frequency modulationparasitic capacitancecontact scheme |
| spellingShingle | Jack Mulcahy Shengtai Shi Frank H. Peters Xing Dai Minimisation of Parasitic Capacitance in Lumped-Element Electro-Absorption Modulators for High-Speed Optical Components Photonics lumped-element electro-absorption modulators radio-frequency modulation parasitic capacitance contact scheme |
| title | Minimisation of Parasitic Capacitance in Lumped-Element Electro-Absorption Modulators for High-Speed Optical Components |
| title_full | Minimisation of Parasitic Capacitance in Lumped-Element Electro-Absorption Modulators for High-Speed Optical Components |
| title_fullStr | Minimisation of Parasitic Capacitance in Lumped-Element Electro-Absorption Modulators for High-Speed Optical Components |
| title_full_unstemmed | Minimisation of Parasitic Capacitance in Lumped-Element Electro-Absorption Modulators for High-Speed Optical Components |
| title_short | Minimisation of Parasitic Capacitance in Lumped-Element Electro-Absorption Modulators for High-Speed Optical Components |
| title_sort | minimisation of parasitic capacitance in lumped element electro absorption modulators for high speed optical components |
| topic | lumped-element electro-absorption modulators radio-frequency modulation parasitic capacitance contact scheme |
| url | https://www.mdpi.com/2304-6732/10/8/885 |
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