Ultrathin polymeric films for interfacial passivation in wide band-gap perovskite solar cells
Abstract Wide band-gap perovskite solar cells have the potential for a relatively high output voltage and resilience in a degradation-inducing environment. Investigating the reasons why high voltages with adequate output power have not been realized yet is an underexplored part in perovskite researc...
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Nature Portfolio
2020-12-01
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Series: | Scientific Reports |
Online Access: | https://doi.org/10.1038/s41598-020-79348-1 |
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author | Parnian Ferdowsi Efrain Ochoa-Martinez Sandy Sanchez Alonso Ullrich Steiner Michael Saliba |
author_facet | Parnian Ferdowsi Efrain Ochoa-Martinez Sandy Sanchez Alonso Ullrich Steiner Michael Saliba |
author_sort | Parnian Ferdowsi |
collection | DOAJ |
description | Abstract Wide band-gap perovskite solar cells have the potential for a relatively high output voltage and resilience in a degradation-inducing environment. Investigating the reasons why high voltages with adequate output power have not been realized yet is an underexplored part in perovskite research although it is of paramount interest for multijunction solar cells. One reason is interfacial carrier recombination that leads to reduced carrier lifetimes and voltage loss. To further improve the Voc of methylammonium lead tri-bromide (MAPbBr3), that has a band-gap of 2.3 eV, interface passivation technique is an important strategy. Here we demonstrate two ultrathin passivation layers consisting of PCBM and PMMA, that can effectively passivate defects at the TiO2/perovskite and perovskite/spiro-OMeTAD interfaces, respectively. In addition, perovskite crystallization was investigated with the established anti-solvent method and the novel flash infrared annealing (FIRA) with and without passivation layers. These modifications significantly suppress interfacial recombination providing a pathway for improved VOC’s from 1.27 to 1.41 V using anti solvent and from 1.12 to 1.36 V using FIRA. Furthermore, we obtained more stable devices through passivation after 140 h where the device retained 70% of the initial performance value. |
first_indexed | 2024-12-14T13:47:34Z |
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id | doaj.art-f8b6830f0b4745e380cc606e8a683f78 |
institution | Directory Open Access Journal |
issn | 2045-2322 |
language | English |
last_indexed | 2024-12-14T13:47:34Z |
publishDate | 2020-12-01 |
publisher | Nature Portfolio |
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series | Scientific Reports |
spelling | doaj.art-f8b6830f0b4745e380cc606e8a683f782022-12-21T22:59:15ZengNature PortfolioScientific Reports2045-23222020-12-0110111010.1038/s41598-020-79348-1Ultrathin polymeric films for interfacial passivation in wide band-gap perovskite solar cellsParnian Ferdowsi0Efrain Ochoa-Martinez1Sandy Sanchez Alonso2Ullrich Steiner3Michael Saliba4Adolphe Merkle Institute, University of FribourgAdolphe Merkle Institute, University of FribourgLaboratory of Photomolecular Science (LSPM), École Polytechnique Fédéral de Lausanne (EPFL)Adolphe Merkle Institute, University of FribourgInstitute for Photovoltaics (ipv), University of StuttgartAbstract Wide band-gap perovskite solar cells have the potential for a relatively high output voltage and resilience in a degradation-inducing environment. Investigating the reasons why high voltages with adequate output power have not been realized yet is an underexplored part in perovskite research although it is of paramount interest for multijunction solar cells. One reason is interfacial carrier recombination that leads to reduced carrier lifetimes and voltage loss. To further improve the Voc of methylammonium lead tri-bromide (MAPbBr3), that has a band-gap of 2.3 eV, interface passivation technique is an important strategy. Here we demonstrate two ultrathin passivation layers consisting of PCBM and PMMA, that can effectively passivate defects at the TiO2/perovskite and perovskite/spiro-OMeTAD interfaces, respectively. In addition, perovskite crystallization was investigated with the established anti-solvent method and the novel flash infrared annealing (FIRA) with and without passivation layers. These modifications significantly suppress interfacial recombination providing a pathway for improved VOC’s from 1.27 to 1.41 V using anti solvent and from 1.12 to 1.36 V using FIRA. Furthermore, we obtained more stable devices through passivation after 140 h where the device retained 70% of the initial performance value.https://doi.org/10.1038/s41598-020-79348-1 |
spellingShingle | Parnian Ferdowsi Efrain Ochoa-Martinez Sandy Sanchez Alonso Ullrich Steiner Michael Saliba Ultrathin polymeric films for interfacial passivation in wide band-gap perovskite solar cells Scientific Reports |
title | Ultrathin polymeric films for interfacial passivation in wide band-gap perovskite solar cells |
title_full | Ultrathin polymeric films for interfacial passivation in wide band-gap perovskite solar cells |
title_fullStr | Ultrathin polymeric films for interfacial passivation in wide band-gap perovskite solar cells |
title_full_unstemmed | Ultrathin polymeric films for interfacial passivation in wide band-gap perovskite solar cells |
title_short | Ultrathin polymeric films for interfacial passivation in wide band-gap perovskite solar cells |
title_sort | ultrathin polymeric films for interfacial passivation in wide band gap perovskite solar cells |
url | https://doi.org/10.1038/s41598-020-79348-1 |
work_keys_str_mv | AT parnianferdowsi ultrathinpolymericfilmsforinterfacialpassivationinwidebandgapperovskitesolarcells AT efrainochoamartinez ultrathinpolymericfilmsforinterfacialpassivationinwidebandgapperovskitesolarcells AT sandysanchezalonso ultrathinpolymericfilmsforinterfacialpassivationinwidebandgapperovskitesolarcells AT ullrichsteiner ultrathinpolymericfilmsforinterfacialpassivationinwidebandgapperovskitesolarcells AT michaelsaliba ultrathinpolymericfilmsforinterfacialpassivationinwidebandgapperovskitesolarcells |