Effect of Facile p-Doping on Electrical and Optoelectronic Characteristics of Ambipolar WSe2 Field-Effect Transistors

Effect of Facile p-Doping on Electrical and Optoelectronic Characteristics of Ambipolar WSe2 Field-Effect Transistors

Abstract We investigated the electrical and optoelectronic characteristics of ambipolar WSe2 field-effect transistors (FETs) via facile p-doping process during the thermal annealing in ambient. Through this annealing, the oxygen molecules were successfully doped into the WSe2 surface, which ensured...

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Hlavní autoři: Junseok Seo, Kyungjune Cho, Woocheol Lee, Jiwon Shin, Jae-Keun Kim, Jaeyoung Kim, Jinsu Pak, Takhee Lee
Médium: Článek
Jazyk:English
Vydáno: SpringerOpen 2019-09-01
Edice:Nanoscale Research Letters
Témata:
WSe2
Ambipolar field-effect transistors
p-doping
Electrical characteristics
Optoelectronic characteristics
On-line přístup:http://link.springer.com/article/10.1186/s11671-019-3137-1

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http://link.springer.com/article/10.1186/s11671-019-3137-1

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