In-depth photocarrier dynamics in a barrier variable iron-oxide and vertically aligned reduced-graphene oxide composite
Abstract A key requirement for semiconductors operating in light-harvesting devices, is to efficiently convert the absorbed photons to electronic excitations while accommodating low loss pathways for the photogenerated carrier’s transport. The quality of this process corresponds to different relaxat...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2022-09-01
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| Series: | npj 2D Materials and Applications |
| Online Access: | https://doi.org/10.1038/s41699-022-00333-5 |
| _version_ | 1811274856014020608 |
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| author | Mojtaba Gilzad Kohan Illia Dobryden Daniel Forchheimer Isabella Concina Alberto Vomiero |
| author_facet | Mojtaba Gilzad Kohan Illia Dobryden Daniel Forchheimer Isabella Concina Alberto Vomiero |
| author_sort | Mojtaba Gilzad Kohan |
| collection | DOAJ |
| description | Abstract A key requirement for semiconductors operating in light-harvesting devices, is to efficiently convert the absorbed photons to electronic excitations while accommodating low loss pathways for the photogenerated carrier’s transport. The quality of this process corresponds to different relaxation phenomena, yet primarily it corresponds to minimized thermalization of photoexcited carriers and maximum transfer of electron-hole pairs in the bulk of semiconductor. However, several semiconductors, while providing a suitable platform for light-harvesting applications, pose intrinsic low carrier diffusion length of photoexcited carriers. Here we report a system based on a vertical network of reduced graphene oxide (rGO) embedded in a thin-film structure of iron oxide semiconductor, intended to exploit fast electron transport in rGO to increase the photoexcited carrier transfer from the bulk of the semiconductor to rGO and then to the external circuit. Using intermodulation conductive force microscopy, we locally monitored the fluctuation of current output, which is the prime indication of successful charge transfer from photoexcited semiconductor to rGO and efficient charge collection from the bulk of the semiconductor. We reveal the fundamental properties of vertical rGO and semiconductor junction in light-harvesting systems that enable the design of new promising materials for broad-band optical applications. |
| first_indexed | 2024-04-12T23:26:37Z |
| format | Article |
| id | doaj.art-f8d414cc8c28490b94a24ba0f13920f7 |
| institution | Directory Open Access Journal |
| issn | 2397-7132 |
| language | English |
| last_indexed | 2024-04-12T23:26:37Z |
| publishDate | 2022-09-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | npj 2D Materials and Applications |
| spelling | doaj.art-f8d414cc8c28490b94a24ba0f13920f72022-12-22T03:12:24ZengNature Portfolionpj 2D Materials and Applications2397-71322022-09-01611810.1038/s41699-022-00333-5In-depth photocarrier dynamics in a barrier variable iron-oxide and vertically aligned reduced-graphene oxide compositeMojtaba Gilzad Kohan0Illia Dobryden1Daniel Forchheimer2Isabella Concina3Alberto Vomiero4Division of Materials Science, Department of Engineering Sciences and Mathematics, Luleå University of TechnologyDivision of Materials Science, Department of Engineering Sciences and Mathematics, Luleå University of TechnologyNanostructure Physics, KTH Royal Institute of TechnologyDivision of Materials Science, Department of Engineering Sciences and Mathematics, Luleå University of TechnologyDivision of Materials Science, Department of Engineering Sciences and Mathematics, Luleå University of TechnologyAbstract A key requirement for semiconductors operating in light-harvesting devices, is to efficiently convert the absorbed photons to electronic excitations while accommodating low loss pathways for the photogenerated carrier’s transport. The quality of this process corresponds to different relaxation phenomena, yet primarily it corresponds to minimized thermalization of photoexcited carriers and maximum transfer of electron-hole pairs in the bulk of semiconductor. However, several semiconductors, while providing a suitable platform for light-harvesting applications, pose intrinsic low carrier diffusion length of photoexcited carriers. Here we report a system based on a vertical network of reduced graphene oxide (rGO) embedded in a thin-film structure of iron oxide semiconductor, intended to exploit fast electron transport in rGO to increase the photoexcited carrier transfer from the bulk of the semiconductor to rGO and then to the external circuit. Using intermodulation conductive force microscopy, we locally monitored the fluctuation of current output, which is the prime indication of successful charge transfer from photoexcited semiconductor to rGO and efficient charge collection from the bulk of the semiconductor. We reveal the fundamental properties of vertical rGO and semiconductor junction in light-harvesting systems that enable the design of new promising materials for broad-band optical applications.https://doi.org/10.1038/s41699-022-00333-5 |
| spellingShingle | Mojtaba Gilzad Kohan Illia Dobryden Daniel Forchheimer Isabella Concina Alberto Vomiero In-depth photocarrier dynamics in a barrier variable iron-oxide and vertically aligned reduced-graphene oxide composite npj 2D Materials and Applications |
| title | In-depth photocarrier dynamics in a barrier variable iron-oxide and vertically aligned reduced-graphene oxide composite |
| title_full | In-depth photocarrier dynamics in a barrier variable iron-oxide and vertically aligned reduced-graphene oxide composite |
| title_fullStr | In-depth photocarrier dynamics in a barrier variable iron-oxide and vertically aligned reduced-graphene oxide composite |
| title_full_unstemmed | In-depth photocarrier dynamics in a barrier variable iron-oxide and vertically aligned reduced-graphene oxide composite |
| title_short | In-depth photocarrier dynamics in a barrier variable iron-oxide and vertically aligned reduced-graphene oxide composite |
| title_sort | in depth photocarrier dynamics in a barrier variable iron oxide and vertically aligned reduced graphene oxide composite |
| url | https://doi.org/10.1038/s41699-022-00333-5 |
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