Influence of defect density on the gas sensing properties of multi-layered graphene grown by chemical vapor deposition
Chemical vapor deposition (CVD) has been demonstrated as a highly promising technique for the production of graphene on large scale and enabling tunability of the intrinsic defects of the films during the synthesis.In this work, we report on the correlation between the density of defects (DoD) and t...
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| Format: | Article |
| Language: | English |
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Elsevier
2021-04-01
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| Series: | Carbon Trends |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2667056921000018 |
| _version_ | 1818611223756800000 |
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| author | Filiberto Ricciardella Sten Vollebregt Rita Tilmann Oliver Hartwig Cian Bartlam Pasqualina M. Sarro Hermann Sachdev Georg S. Duesberg |
| author_facet | Filiberto Ricciardella Sten Vollebregt Rita Tilmann Oliver Hartwig Cian Bartlam Pasqualina M. Sarro Hermann Sachdev Georg S. Duesberg |
| author_sort | Filiberto Ricciardella |
| collection | DOAJ |
| description | Chemical vapor deposition (CVD) has been demonstrated as a highly promising technique for the production of graphene on large scale and enabling tunability of the intrinsic defects of the films during the synthesis.In this work, we report on the correlation between the density of defects (DoD) and the kinetics of interaction of multi-layered graphene (MLG) with nitrogen dioxide (NO2) used as a target gas. We grow MLG on a pre-patterned molybdenum (Mo) catalyst layer, tailoring the DoD while growing MLG at temperatures from 850 °C to 980 °C. Analysing the Raman spectra, we show the lowering of the DoD as well as a quality dependence of MLG as a function of the growth temperature. The chemi-resistors based on MLG grown at different temperatures unambiguously highlight that, both during the exposure and the subsequent purge phase, the more defective the MLG, the more intense the NO2’s molecules interaction with MLG. Our results significantly mark a step forward in tuning the sensing properties of MLG without the need of any post-processing of the material after synthesis. |
| first_indexed | 2024-12-16T15:26:55Z |
| format | Article |
| id | doaj.art-f8e539d6753849028dc7210c75cffe06 |
| institution | Directory Open Access Journal |
| issn | 2667-0569 |
| language | English |
| last_indexed | 2024-12-16T15:26:55Z |
| publishDate | 2021-04-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Carbon Trends |
| spelling | doaj.art-f8e539d6753849028dc7210c75cffe062022-12-21T22:26:28ZengElsevierCarbon Trends2667-05692021-04-013100024Influence of defect density on the gas sensing properties of multi-layered graphene grown by chemical vapor depositionFiliberto Ricciardella0Sten Vollebregt1Rita Tilmann2Oliver Hartwig3Cian Bartlam4Pasqualina M. Sarro5Hermann Sachdev6Georg S. Duesberg7Department of Microelectronics, Delft University of Technology, Feldmannweg 17, 2628 CT Delft, the Netherlands; Institute of Physics, Universitaet der Bundeswehr Muenchen, Werner-Heisenberg-Weg 39, 85577 Neubiberg, Germany; Corresponding author.Department of Microelectronics, Delft University of Technology, Feldmannweg 17, 2628 CT Delft, the NetherlandsInstitute of Physics, Universitaet der Bundeswehr Muenchen, Werner-Heisenberg-Weg 39, 85577 Neubiberg, GermanyInstitute of Physics, Universitaet der Bundeswehr Muenchen, Werner-Heisenberg-Weg 39, 85577 Neubiberg, GermanyInstitute of Physics, Universitaet der Bundeswehr Muenchen, Werner-Heisenberg-Weg 39, 85577 Neubiberg, GermanyDepartment of Microelectronics, Delft University of Technology, Feldmannweg 17, 2628 CT Delft, the NetherlandsInstitute of Physics, Universitaet der Bundeswehr Muenchen, Werner-Heisenberg-Weg 39, 85577 Neubiberg, GermanyInstitute of Physics, Universitaet der Bundeswehr Muenchen, Werner-Heisenberg-Weg 39, 85577 Neubiberg, GermanyChemical vapor deposition (CVD) has been demonstrated as a highly promising technique for the production of graphene on large scale and enabling tunability of the intrinsic defects of the films during the synthesis.In this work, we report on the correlation between the density of defects (DoD) and the kinetics of interaction of multi-layered graphene (MLG) with nitrogen dioxide (NO2) used as a target gas. We grow MLG on a pre-patterned molybdenum (Mo) catalyst layer, tailoring the DoD while growing MLG at temperatures from 850 °C to 980 °C. Analysing the Raman spectra, we show the lowering of the DoD as well as a quality dependence of MLG as a function of the growth temperature. The chemi-resistors based on MLG grown at different temperatures unambiguously highlight that, both during the exposure and the subsequent purge phase, the more defective the MLG, the more intense the NO2’s molecules interaction with MLG. Our results significantly mark a step forward in tuning the sensing properties of MLG without the need of any post-processing of the material after synthesis.http://www.sciencedirect.com/science/article/pii/S2667056921000018GrapheneDefectsSensitivityChemical vapor depositionKinetics of interaction |
| spellingShingle | Filiberto Ricciardella Sten Vollebregt Rita Tilmann Oliver Hartwig Cian Bartlam Pasqualina M. Sarro Hermann Sachdev Georg S. Duesberg Influence of defect density on the gas sensing properties of multi-layered graphene grown by chemical vapor deposition Carbon Trends Graphene Defects Sensitivity Chemical vapor deposition Kinetics of interaction |
| title | Influence of defect density on the gas sensing properties of multi-layered graphene grown by chemical vapor deposition |
| title_full | Influence of defect density on the gas sensing properties of multi-layered graphene grown by chemical vapor deposition |
| title_fullStr | Influence of defect density on the gas sensing properties of multi-layered graphene grown by chemical vapor deposition |
| title_full_unstemmed | Influence of defect density on the gas sensing properties of multi-layered graphene grown by chemical vapor deposition |
| title_short | Influence of defect density on the gas sensing properties of multi-layered graphene grown by chemical vapor deposition |
| title_sort | influence of defect density on the gas sensing properties of multi layered graphene grown by chemical vapor deposition |
| topic | Graphene Defects Sensitivity Chemical vapor deposition Kinetics of interaction |
| url | http://www.sciencedirect.com/science/article/pii/S2667056921000018 |
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