Oxygen migration around the filament region in HfOx memristors

The exact composition and structure of conductive filaments in hafnia-based memristors are still not fully understood, but recent theoretical investigations reveal that hexagonal HfOx phases close to the h.c.p. Hf structure are probable filament candidates. In this work we list h.c.p. Hf, Hf6O, Hf3O...

Full description

Bibliographic Details
Main Authors: Ge-Qi Mao, Kan-Hao Xue, Ya-Qian Song, Wei Wu, Jun-Hui Yuan, Li-Heng Li, Huajun Sun, Shibing Long, Xiang-Shui Miao
Format: Article
Language:English
Published: AIP Publishing LLC 2019-10-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5122989
_version_ 1818419492881956864
author Ge-Qi Mao
Kan-Hao Xue
Ya-Qian Song
Wei Wu
Jun-Hui Yuan
Li-Heng Li
Huajun Sun
Shibing Long
Xiang-Shui Miao
author_facet Ge-Qi Mao
Kan-Hao Xue
Ya-Qian Song
Wei Wu
Jun-Hui Yuan
Li-Heng Li
Huajun Sun
Shibing Long
Xiang-Shui Miao
author_sort Ge-Qi Mao
collection DOAJ
description The exact composition and structure of conductive filaments in hafnia-based memristors are still not fully understood, but recent theoretical investigations reveal that hexagonal HfOx phases close to the h.c.p. Hf structure are probable filament candidates. In this work we list h.c.p. Hf, Hf6O, Hf3O and Hf2O as possible phases for the filament in hafnia memristors. Their differences in lattice parameters, electronic structures and O charge states are studied in details. Migration of O ions for both in-plane and out-of-plane directions in these phases is investigated using first-principles calculations. Both single-phase supercells and filament-in-dielectric models are used for migration barrier calculations, while the latter is proven to be more accurate for the c-direction. The migration of O ions is fastest in metal Hf, while slowest in Hf2O. The existence of O interstitials in Hf tends to hinder the transport of O.
first_indexed 2024-12-14T12:39:26Z
format Article
id doaj.art-f8ebfcff8fa944fb92d95dd9888c556d
institution Directory Open Access Journal
issn 2158-3226
language English
last_indexed 2024-12-14T12:39:26Z
publishDate 2019-10-01
publisher AIP Publishing LLC
record_format Article
series AIP Advances
spelling doaj.art-f8ebfcff8fa944fb92d95dd9888c556d2022-12-21T23:00:57ZengAIP Publishing LLCAIP Advances2158-32262019-10-01910105007105007-910.1063/1.5122989007910ADVOxygen migration around the filament region in HfOx memristorsGe-Qi Mao0Kan-Hao Xue1Ya-Qian Song2Wei Wu3Jun-Hui Yuan4Li-Heng Li5Huajun Sun6Shibing Long7Xiang-Shui Miao8Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, Hubei, ChinaWuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, Hubei, ChinaWuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, Hubei, ChinaWuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, Hubei, ChinaWuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, Hubei, ChinaWuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, Hubei, ChinaWuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, Hubei, ChinaSchool of Microelectronics, University of Science and Technology of China, Hefei 230026, Anhui, ChinaWuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, Hubei, ChinaThe exact composition and structure of conductive filaments in hafnia-based memristors are still not fully understood, but recent theoretical investigations reveal that hexagonal HfOx phases close to the h.c.p. Hf structure are probable filament candidates. In this work we list h.c.p. Hf, Hf6O, Hf3O and Hf2O as possible phases for the filament in hafnia memristors. Their differences in lattice parameters, electronic structures and O charge states are studied in details. Migration of O ions for both in-plane and out-of-plane directions in these phases is investigated using first-principles calculations. Both single-phase supercells and filament-in-dielectric models are used for migration barrier calculations, while the latter is proven to be more accurate for the c-direction. The migration of O ions is fastest in metal Hf, while slowest in Hf2O. The existence of O interstitials in Hf tends to hinder the transport of O.http://dx.doi.org/10.1063/1.5122989
spellingShingle Ge-Qi Mao
Kan-Hao Xue
Ya-Qian Song
Wei Wu
Jun-Hui Yuan
Li-Heng Li
Huajun Sun
Shibing Long
Xiang-Shui Miao
Oxygen migration around the filament region in HfOx memristors
AIP Advances
title Oxygen migration around the filament region in HfOx memristors
title_full Oxygen migration around the filament region in HfOx memristors
title_fullStr Oxygen migration around the filament region in HfOx memristors
title_full_unstemmed Oxygen migration around the filament region in HfOx memristors
title_short Oxygen migration around the filament region in HfOx memristors
title_sort oxygen migration around the filament region in hfox memristors
url http://dx.doi.org/10.1063/1.5122989
work_keys_str_mv AT geqimao oxygenmigrationaroundthefilamentregioninhfoxmemristors
AT kanhaoxue oxygenmigrationaroundthefilamentregioninhfoxmemristors
AT yaqiansong oxygenmigrationaroundthefilamentregioninhfoxmemristors
AT weiwu oxygenmigrationaroundthefilamentregioninhfoxmemristors
AT junhuiyuan oxygenmigrationaroundthefilamentregioninhfoxmemristors
AT lihengli oxygenmigrationaroundthefilamentregioninhfoxmemristors
AT huajunsun oxygenmigrationaroundthefilamentregioninhfoxmemristors
AT shibinglong oxygenmigrationaroundthefilamentregioninhfoxmemristors
AT xiangshuimiao oxygenmigrationaroundthefilamentregioninhfoxmemristors