EMISSION PROCESSES OF QUANTUM WELL INTERACTION WITH DELTA-LAYER IN pHEMT-HETEROSTRUCTURES
The paper provides experimental and theoretical study of pHEMT heterostructures with quantum well (QW) AlGaAs/InGaAs/GaAs and delta-doped layer used as active layers for fabrication of 4-18 GHz transistors. As the experimental techniques, the electrochemical capacitance-voltage (ECV) profiling and o...
| मुख्य लेखकों: | , , |
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| स्वरूप: | लेख |
| भाषा: | Russian |
| प्रकाशित: |
Saint Petersburg Electrotechnical University "LETI"
2018-10-01
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| श्रृंखला: | Известия высших учебных заведений России: Радиоэлектроника |
| विषय: | |
| ऑनलाइन पहुंच: | https://re.eltech.ru/jour/article/view/259 |