EMISSION PROCESSES OF QUANTUM WELL INTERACTION WITH DELTA-LAYER IN pHEMT-HETEROSTRUCTURES

EMISSION PROCESSES OF QUANTUM WELL INTERACTION WITH DELTA-LAYER IN pHEMT-HETEROSTRUCTURES

The paper provides experimental and theoretical study of pHEMT heterostructures with quantum well (QW) AlGaAs/InGaAs/GaAs and delta-doped layer used as active layers for fabrication of 4-18 GHz transistors. As the experimental techniques, the electrochemical capacitance-voltage (ECV) profiling and o...

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Bibliographic Details
Main Authors:	Yana V. Ivanova, George E. Yakovlev, Vasily I. Zubkov
Format:	Article
Language:	Russian
Published:	Saint Petersburg Electrotechnical University "LETI" 2018-10-01
Series:	Известия высших учебных заведений России: Радиоэлектроника
Subjects:	электрохимическое вольт-фарадное профилирование ecv phemt квантовая яма gaas ingaas/gaas/algaas туннелирование самосогласованное решение уравнений шредингера и пуассона
Online Access:	https://re.eltech.ru/jour/article/view/259

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