Colossal magnetoresistance and anomalous Hall effect in nonmagnetic semiconductors

Colossal Magnetoresistance (CMR) in nonmagnetic semiconductors and magnetic materials has been investigated as a function of magnetic field, charge carriers concentration and temperature. Both types of materials demonstrated qualitative and quantitative coincidence of CMR dependence on magnetic fiel...

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Main Authors: Obukhov Sergei, Panysheva Tatiana
Format: Article
Language:English
Published: EDP Sciences 2018-01-01
Series:EPJ Web of Conferences
Online Access:https://doi.org/10.1051/epjconf/201818506011
_version_ 1818348402226757632
author Obukhov Sergei
Panysheva Tatiana
author_facet Obukhov Sergei
Panysheva Tatiana
author_sort Obukhov Sergei
collection DOAJ
description Colossal Magnetoresistance (CMR) in nonmagnetic semiconductors and magnetic materials has been investigated as a function of magnetic field, charge carriers concentration and temperature. Both types of materials demonstrated qualitative and quantitative coincidence of CMR dependence on magnetic field, charge carriers concentration and temperature. The findings support the CMR interpretation in the framework of the Excitonic Insulator (EI) model and transition of an insulating EI phase to conducting state under magnetic field for all types of materials under study. It is suggested that Jahn-Teller distortion caused by magnetic ions and external uniaxial stress could initiate EI phase formation
first_indexed 2024-12-13T17:49:29Z
format Article
id doaj.art-f9085ac890584f4aae4ce5c511a44038
institution Directory Open Access Journal
issn 2100-014X
language English
last_indexed 2024-12-13T17:49:29Z
publishDate 2018-01-01
publisher EDP Sciences
record_format Article
series EPJ Web of Conferences
spelling doaj.art-f9085ac890584f4aae4ce5c511a440382022-12-21T23:36:33ZengEDP SciencesEPJ Web of Conferences2100-014X2018-01-011850601110.1051/epjconf/201818506011epjconf_mism2017_06011Colossal magnetoresistance and anomalous Hall effect in nonmagnetic semiconductorsObukhov SergeiPanysheva TatianaColossal Magnetoresistance (CMR) in nonmagnetic semiconductors and magnetic materials has been investigated as a function of magnetic field, charge carriers concentration and temperature. Both types of materials demonstrated qualitative and quantitative coincidence of CMR dependence on magnetic field, charge carriers concentration and temperature. The findings support the CMR interpretation in the framework of the Excitonic Insulator (EI) model and transition of an insulating EI phase to conducting state under magnetic field for all types of materials under study. It is suggested that Jahn-Teller distortion caused by magnetic ions and external uniaxial stress could initiate EI phase formationhttps://doi.org/10.1051/epjconf/201818506011
spellingShingle Obukhov Sergei
Panysheva Tatiana
Colossal magnetoresistance and anomalous Hall effect in nonmagnetic semiconductors
EPJ Web of Conferences
title Colossal magnetoresistance and anomalous Hall effect in nonmagnetic semiconductors
title_full Colossal magnetoresistance and anomalous Hall effect in nonmagnetic semiconductors
title_fullStr Colossal magnetoresistance and anomalous Hall effect in nonmagnetic semiconductors
title_full_unstemmed Colossal magnetoresistance and anomalous Hall effect in nonmagnetic semiconductors
title_short Colossal magnetoresistance and anomalous Hall effect in nonmagnetic semiconductors
title_sort colossal magnetoresistance and anomalous hall effect in nonmagnetic semiconductors
url https://doi.org/10.1051/epjconf/201818506011
work_keys_str_mv AT obukhovsergei colossalmagnetoresistanceandanomaloushalleffectinnonmagneticsemiconductors
AT panyshevatatiana colossalmagnetoresistanceandanomaloushalleffectinnonmagneticsemiconductors