Study on Texture Formation of Sb<sub>2</sub>Te Thin Films for Phase Change Memory Applications
We investigated the texture formation of Sb<sub>2</sub>Te thin films for phase change memory applications. The Sb<sub>2</sub>Te thin films with different thicknesses were deposited on Si (100) wafers by the magnetron sputtering method. As-deposited Sb<sub>2</sub>T...
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MDPI AG
2023-02-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/13/3/377 |
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| author | Lei Kang Leng Chen |
| author_facet | Lei Kang Leng Chen |
| author_sort | Lei Kang |
| collection | DOAJ |
| description | We investigated the texture formation of Sb<sub>2</sub>Te thin films for phase change memory applications. The Sb<sub>2</sub>Te thin films with different thicknesses were deposited on Si (100) wafers by the magnetron sputtering method. As-deposited Sb<sub>2</sub>Te thin films were annealed at various temperatures and times. The texture characterization was performed by using X-ray diffraction (XRD) and electron backscatter diffraction (EBSD). Experimental results show that the annealed Sb<sub>2</sub>Te thin films exhibit the <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mfenced close="}" open="{"><mrow><mn>11</mn><mover accent="true"><mn>2</mn><mo>¯</mo></mover><mn>0</mn></mrow></mfenced></mrow></semantics></math></inline-formula> and <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mfenced close="}" open="{"><mrow><mn>10</mn><mover accent="true"><mn>1</mn><mo>¯</mo></mover><mn>0</mn></mrow></mfenced></mrow></semantics></math></inline-formula> prismatic texture. The formation of prismatic texture is induced by the lattice strain, surface energy, and coarse grains, in which the lattice strain is the essential origin of prismatic preference. Electronic transport properties of Sb<sub>2</sub>Te thin films were monitored by a physical property measurement system (PPMS). It was found that the formation of prismatic texture promotes the increase of carrier mobility. The stability of the film–substrate interface was also assessed by calculating mismatch. The prismatic-preferred Sb<sub>2</sub>Te thin films exhibit higher mismatch with a silicon wafer, reducing the interface stability. |
| first_indexed | 2024-03-11T06:43:20Z |
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| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-11T06:43:20Z |
| publishDate | 2023-02-01 |
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| record_format | Article |
| series | Crystals |
| spelling | doaj.art-f943e9e5006a4805b32945a54ff2428f2023-11-17T10:27:55ZengMDPI AGCrystals2073-43522023-02-0113337710.3390/cryst13030377Study on Texture Formation of Sb<sub>2</sub>Te Thin Films for Phase Change Memory ApplicationsLei Kang0Leng Chen1School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, ChinaSchool of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, ChinaWe investigated the texture formation of Sb<sub>2</sub>Te thin films for phase change memory applications. The Sb<sub>2</sub>Te thin films with different thicknesses were deposited on Si (100) wafers by the magnetron sputtering method. As-deposited Sb<sub>2</sub>Te thin films were annealed at various temperatures and times. The texture characterization was performed by using X-ray diffraction (XRD) and electron backscatter diffraction (EBSD). Experimental results show that the annealed Sb<sub>2</sub>Te thin films exhibit the <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mfenced close="}" open="{"><mrow><mn>11</mn><mover accent="true"><mn>2</mn><mo>¯</mo></mover><mn>0</mn></mrow></mfenced></mrow></semantics></math></inline-formula> and <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mfenced close="}" open="{"><mrow><mn>10</mn><mover accent="true"><mn>1</mn><mo>¯</mo></mover><mn>0</mn></mrow></mfenced></mrow></semantics></math></inline-formula> prismatic texture. The formation of prismatic texture is induced by the lattice strain, surface energy, and coarse grains, in which the lattice strain is the essential origin of prismatic preference. Electronic transport properties of Sb<sub>2</sub>Te thin films were monitored by a physical property measurement system (PPMS). It was found that the formation of prismatic texture promotes the increase of carrier mobility. The stability of the film–substrate interface was also assessed by calculating mismatch. The prismatic-preferred Sb<sub>2</sub>Te thin films exhibit higher mismatch with a silicon wafer, reducing the interface stability.https://www.mdpi.com/2073-4352/13/3/377phase change memorySb<sub>2</sub>Te thin filmsprismatic textureelectrical propertiesinterface stability |
| spellingShingle | Lei Kang Leng Chen Study on Texture Formation of Sb<sub>2</sub>Te Thin Films for Phase Change Memory Applications Crystals phase change memory Sb<sub>2</sub>Te thin films prismatic texture electrical properties interface stability |
| title | Study on Texture Formation of Sb<sub>2</sub>Te Thin Films for Phase Change Memory Applications |
| title_full | Study on Texture Formation of Sb<sub>2</sub>Te Thin Films for Phase Change Memory Applications |
| title_fullStr | Study on Texture Formation of Sb<sub>2</sub>Te Thin Films for Phase Change Memory Applications |
| title_full_unstemmed | Study on Texture Formation of Sb<sub>2</sub>Te Thin Films for Phase Change Memory Applications |
| title_short | Study on Texture Formation of Sb<sub>2</sub>Te Thin Films for Phase Change Memory Applications |
| title_sort | study on texture formation of sb sub 2 sub te thin films for phase change memory applications |
| topic | phase change memory Sb<sub>2</sub>Te thin films prismatic texture electrical properties interface stability |
| url | https://www.mdpi.com/2073-4352/13/3/377 |
| work_keys_str_mv | AT leikang studyontextureformationofsbsub2subtethinfilmsforphasechangememoryapplications AT lengchen studyontextureformationofsbsub2subtethinfilmsforphasechangememoryapplications |