Graphene: Hexagonal Boron Nitride Composite Films with Low-Resistance for Flexible Electronics
The structure and electric properties of hexagonal boron nitride (h-BN):graphene composite with additives of the conductive polymer PEDOT:PSS and ethylene glycol were examined. The graphene and h-BN flakes synthesized in plasma with nanometer sizes were used for experiments. It was found that the ad...
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| Format: | Article |
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MDPI AG
2022-05-01
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| Series: | Nanomaterials |
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| author | Irina V. Antonova Marina B. Shavelkina Artem I. Ivanov Dmitriy A. Poteryaev Nadezhda A. Nebogatikova Anna A. Buzmakova Regina A. Soots Vladimir A. Katarzhis |
| author_facet | Irina V. Antonova Marina B. Shavelkina Artem I. Ivanov Dmitriy A. Poteryaev Nadezhda A. Nebogatikova Anna A. Buzmakova Regina A. Soots Vladimir A. Katarzhis |
| author_sort | Irina V. Antonova |
| collection | DOAJ |
| description | The structure and electric properties of hexagonal boron nitride (h-BN):graphene composite with additives of the conductive polymer PEDOT:PSS and ethylene glycol were examined. The graphene and h-BN flakes synthesized in plasma with nanometer sizes were used for experiments. It was found that the addition of more than 10<sup>−3</sup> mass% of PEDOT:PSS to the graphene suspension or h-BN:graphene composite in combination with ethylene glycol leads to a strong decrease (4–5 orders of magnitude, in our case) in the resistance of the films created from these suspensions. This is caused by an increase in the conductivity of PEDOT:PSS due to the interaction with ethylene glycol and synergetic effect on the composite properties of h-BN:graphene films. The addition of PEDOT:PSS to the h-BN:graphene composite leads to the correction of the bonds between nanoparticles and a weak change in the resistance under the tensile strain caused by the sample bending. A more pronounced flexibility of the composite films with tree components is demonstrated. The self-organization effects for graphene flakes and polar h-BN flakes lead to the formation of micrometer sized plates in drops and uniform-in-size nanoparticles in inks. The ratio of the components in the composite was found for the observed strong hysteresis and a negative differential resistance. Generally, PEDOT:PSS and ethylene glycol composite films are promising for their application as electrodes or active elements for logic and signal processing. |
| first_indexed | 2024-03-10T03:16:50Z |
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| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-10T03:16:50Z |
| publishDate | 2022-05-01 |
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| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-f954b186ef0f4703b34fb1122bc99e9d2023-11-23T12:26:53ZengMDPI AGNanomaterials2079-49912022-05-011210170310.3390/nano12101703Graphene: Hexagonal Boron Nitride Composite Films with Low-Resistance for Flexible ElectronicsIrina V. Antonova0Marina B. Shavelkina1Artem I. Ivanov2Dmitriy A. Poteryaev3Nadezhda A. Nebogatikova4Anna A. Buzmakova5Regina A. Soots6Vladimir A. Katarzhis7Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Aven., Novosibirsk 630090, RussiaJoint Institute for High Temperatures RAS, Izhorskaya Str. 13 Bd.2, Moscow 125412, RussiaRzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Aven., Novosibirsk 630090, RussiaRzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Aven., Novosibirsk 630090, RussiaRzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Aven., Novosibirsk 630090, RussiaDepartment of Semiconductor Devices and Microelectronics, Novosibirsk State Technical University, 20 K. Marx Str., Novosibirsk 630073, RussiaRzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Aven., Novosibirsk 630090, RussiaJoint Institute for High Temperatures RAS, Izhorskaya Str. 13 Bd.2, Moscow 125412, RussiaThe structure and electric properties of hexagonal boron nitride (h-BN):graphene composite with additives of the conductive polymer PEDOT:PSS and ethylene glycol were examined. The graphene and h-BN flakes synthesized in plasma with nanometer sizes were used for experiments. It was found that the addition of more than 10<sup>−3</sup> mass% of PEDOT:PSS to the graphene suspension or h-BN:graphene composite in combination with ethylene glycol leads to a strong decrease (4–5 orders of magnitude, in our case) in the resistance of the films created from these suspensions. This is caused by an increase in the conductivity of PEDOT:PSS due to the interaction with ethylene glycol and synergetic effect on the composite properties of h-BN:graphene films. The addition of PEDOT:PSS to the h-BN:graphene composite leads to the correction of the bonds between nanoparticles and a weak change in the resistance under the tensile strain caused by the sample bending. A more pronounced flexibility of the composite films with tree components is demonstrated. The self-organization effects for graphene flakes and polar h-BN flakes lead to the formation of micrometer sized plates in drops and uniform-in-size nanoparticles in inks. The ratio of the components in the composite was found for the observed strong hysteresis and a negative differential resistance. Generally, PEDOT:PSS and ethylene glycol composite films are promising for their application as electrodes or active elements for logic and signal processing.https://www.mdpi.com/2079-4991/12/10/1703DC plasma synthesiscomposite nanoparticle graphene:h-BN:PEDOT:PSSstructureelectric propertiesself-organization effectinkjet 2D printing technologies |
| spellingShingle | Irina V. Antonova Marina B. Shavelkina Artem I. Ivanov Dmitriy A. Poteryaev Nadezhda A. Nebogatikova Anna A. Buzmakova Regina A. Soots Vladimir A. Katarzhis Graphene: Hexagonal Boron Nitride Composite Films with Low-Resistance for Flexible Electronics Nanomaterials DC plasma synthesis composite nanoparticle graphene:h-BN:PEDOT:PSS structure electric properties self-organization effect inkjet 2D printing technologies |
| title | Graphene: Hexagonal Boron Nitride Composite Films with Low-Resistance for Flexible Electronics |
| title_full | Graphene: Hexagonal Boron Nitride Composite Films with Low-Resistance for Flexible Electronics |
| title_fullStr | Graphene: Hexagonal Boron Nitride Composite Films with Low-Resistance for Flexible Electronics |
| title_full_unstemmed | Graphene: Hexagonal Boron Nitride Composite Films with Low-Resistance for Flexible Electronics |
| title_short | Graphene: Hexagonal Boron Nitride Composite Films with Low-Resistance for Flexible Electronics |
| title_sort | graphene hexagonal boron nitride composite films with low resistance for flexible electronics |
| topic | DC plasma synthesis composite nanoparticle graphene:h-BN:PEDOT:PSS structure electric properties self-organization effect inkjet 2D printing technologies |
| url | https://www.mdpi.com/2079-4991/12/10/1703 |
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