An optimized parameter design method of SiC/Si hybrid switch considering turn-off current spike
In order to reduce the switching loss of SiC MOSFET/Si IGBT (SiC/Si) hybrid switch, the switching mode that turn off the Si IGBT prior to the SiC MOSFET is generally adopted to achieved the zero-voltage switching operation of IGBT. The minority carrier in N-base region of the IGBT are recombined in...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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Elsevier
2022-11-01
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| Series: | Energy Reports |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2352484722014731 |
| _version_ | 1797900739601760256 |
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| author | Haihong Qin Sixuan Xie Qian Xun Fanghua Zhang Zhenxiang Xu Lingyan Wang |
| author_facet | Haihong Qin Sixuan Xie Qian Xun Fanghua Zhang Zhenxiang Xu Lingyan Wang |
| author_sort | Haihong Qin |
| collection | DOAJ |
| description | In order to reduce the switching loss of SiC MOSFET/Si IGBT (SiC/Si) hybrid switch, the switching mode that turn off the Si IGBT prior to the SiC MOSFET is generally adopted to achieved the zero-voltage switching operation of IGBT. The minority carrier in N-base region of the IGBT are recombined in the form of exponential attenuation due to the conductivity modulation effect. When the SiC MOSFET is turned off, if the carrier recombination process of the IGBT is not finished, it needs to bear a large collector–emitter voltage change rate, resulting in apparent current spike. This current spike will increase the current stress of the device and produce additional turn-off loss. The equivalent model of double pulse test circuit of SiC/Si hybrid switch considering parasitic parameters is established, and the turn-off transient process is given analytically. The influence of turn-off delay time, circuit parameters and working conditions on current spike are analysed quantitatively. Combined with the consideration of device stress and comprehensive turn-off loss, an optimized circuit design method of SiC/Si hybrid switch considering turn-off current peak is proposed, which provides theoretical and design guidance for high reliability and high efficiency SiC/Si-based converters. |
| first_indexed | 2024-04-10T08:49:41Z |
| format | Article |
| id | doaj.art-f9678e08fa1c4770a9e8903000cc0e66 |
| institution | Directory Open Access Journal |
| issn | 2352-4847 |
| language | English |
| last_indexed | 2024-04-10T08:49:41Z |
| publishDate | 2022-11-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Energy Reports |
| spelling | doaj.art-f9678e08fa1c4770a9e8903000cc0e662023-02-22T04:31:04ZengElsevierEnergy Reports2352-48472022-11-018789797An optimized parameter design method of SiC/Si hybrid switch considering turn-off current spikeHaihong Qin0Sixuan Xie1Qian Xun2Fanghua Zhang3Zhenxiang Xu4Lingyan Wang5College of Automation Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, China; Corresponding author.College of Automation Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, ChinaDivision of Electric Power Engineering, Department of Electrical Engineering, Chalmers University of Technology, Hörsalsvägen 11, Gothenburg, SE-41279, SwedenCollege of Automation Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, ChinaBeijing Institute of Precision Mechatronics and Controls, Beijing 100071, ChinaBeijing Institute of Precision Mechatronics and Controls, Beijing 100071, ChinaIn order to reduce the switching loss of SiC MOSFET/Si IGBT (SiC/Si) hybrid switch, the switching mode that turn off the Si IGBT prior to the SiC MOSFET is generally adopted to achieved the zero-voltage switching operation of IGBT. The minority carrier in N-base region of the IGBT are recombined in the form of exponential attenuation due to the conductivity modulation effect. When the SiC MOSFET is turned off, if the carrier recombination process of the IGBT is not finished, it needs to bear a large collector–emitter voltage change rate, resulting in apparent current spike. This current spike will increase the current stress of the device and produce additional turn-off loss. The equivalent model of double pulse test circuit of SiC/Si hybrid switch considering parasitic parameters is established, and the turn-off transient process is given analytically. The influence of turn-off delay time, circuit parameters and working conditions on current spike are analysed quantitatively. Combined with the consideration of device stress and comprehensive turn-off loss, an optimized circuit design method of SiC/Si hybrid switch considering turn-off current peak is proposed, which provides theoretical and design guidance for high reliability and high efficiency SiC/Si-based converters.http://www.sciencedirect.com/science/article/pii/S2352484722014731SiC MOSFETSi IGBTHybrid switchSwitching lossParameter optimization |
| spellingShingle | Haihong Qin Sixuan Xie Qian Xun Fanghua Zhang Zhenxiang Xu Lingyan Wang An optimized parameter design method of SiC/Si hybrid switch considering turn-off current spike Energy Reports SiC MOSFET Si IGBT Hybrid switch Switching loss Parameter optimization |
| title | An optimized parameter design method of SiC/Si hybrid switch considering turn-off current spike |
| title_full | An optimized parameter design method of SiC/Si hybrid switch considering turn-off current spike |
| title_fullStr | An optimized parameter design method of SiC/Si hybrid switch considering turn-off current spike |
| title_full_unstemmed | An optimized parameter design method of SiC/Si hybrid switch considering turn-off current spike |
| title_short | An optimized parameter design method of SiC/Si hybrid switch considering turn-off current spike |
| title_sort | optimized parameter design method of sic si hybrid switch considering turn off current spike |
| topic | SiC MOSFET Si IGBT Hybrid switch Switching loss Parameter optimization |
| url | http://www.sciencedirect.com/science/article/pii/S2352484722014731 |
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