An optimized parameter design method of SiC/Si hybrid switch considering turn-off current spike
In order to reduce the switching loss of SiC MOSFET/Si IGBT (SiC/Si) hybrid switch, the switching mode that turn off the Si IGBT prior to the SiC MOSFET is generally adopted to achieved the zero-voltage switching operation of IGBT. The minority carrier in N-base region of the IGBT are recombined in...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2022-11-01
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| Series: | Energy Reports |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2352484722014731 |