Memory properties and charge effect study in Si nanocrystals by scanning capacitance microscopy and spectroscopy

<p>Abstract</p> <p>In this letter, isolated Si nanocrystal has been formed by dewetting process with a thin silicon dioxide layer on top. Scanning capacitance microscopy and spectroscopy were used to study the memory properties and charge effect in the Si nanocrystal in ambient tem...

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Main Authors: Bassani Franck, Lin Zhen, Bremond Georges
Format: Article
Language:English
Published: SpringerOpen 2011-01-01
Series:Nanoscale Research Letters
Online Access:http://www.nanoscalereslett.com/content/6/1/163
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author Bassani Franck
Lin Zhen
Bremond Georges
author_facet Bassani Franck
Lin Zhen
Bremond Georges
author_sort Bassani Franck
collection DOAJ
description <p>Abstract</p> <p>In this letter, isolated Si nanocrystal has been formed by dewetting process with a thin silicon dioxide layer on top. Scanning capacitance microscopy and spectroscopy were used to study the memory properties and charge effect in the Si nanocrystal in ambient temperature. The retention time of trapped charges injected by different direct current (DC) bias were evaluated and compared. By ramp process, strong hysteresis window was observed. The DC spectra curve shift direction and distance was observed differently for quantitative measurements. Holes or electrons can be separately injected into these Si-ncs and the capacitance changes caused by these trapped charges can be easily detected by scanning capacitance microscopy/spectroscopy at the nanometer scale. This study is very useful for nanocrystal charge trap memory application.</p>
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spelling doaj.art-f974ee672ce84c24b94c01850a377a2e2023-09-03T09:45:35ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2011-01-0161163Memory properties and charge effect study in Si nanocrystals by scanning capacitance microscopy and spectroscopyBassani FranckLin ZhenBremond Georges<p>Abstract</p> <p>In this letter, isolated Si nanocrystal has been formed by dewetting process with a thin silicon dioxide layer on top. Scanning capacitance microscopy and spectroscopy were used to study the memory properties and charge effect in the Si nanocrystal in ambient temperature. The retention time of trapped charges injected by different direct current (DC) bias were evaluated and compared. By ramp process, strong hysteresis window was observed. The DC spectra curve shift direction and distance was observed differently for quantitative measurements. Holes or electrons can be separately injected into these Si-ncs and the capacitance changes caused by these trapped charges can be easily detected by scanning capacitance microscopy/spectroscopy at the nanometer scale. This study is very useful for nanocrystal charge trap memory application.</p>http://www.nanoscalereslett.com/content/6/1/163
spellingShingle Bassani Franck
Lin Zhen
Bremond Georges
Memory properties and charge effect study in Si nanocrystals by scanning capacitance microscopy and spectroscopy
Nanoscale Research Letters
title Memory properties and charge effect study in Si nanocrystals by scanning capacitance microscopy and spectroscopy
title_full Memory properties and charge effect study in Si nanocrystals by scanning capacitance microscopy and spectroscopy
title_fullStr Memory properties and charge effect study in Si nanocrystals by scanning capacitance microscopy and spectroscopy
title_full_unstemmed Memory properties and charge effect study in Si nanocrystals by scanning capacitance microscopy and spectroscopy
title_short Memory properties and charge effect study in Si nanocrystals by scanning capacitance microscopy and spectroscopy
title_sort memory properties and charge effect study in si nanocrystals by scanning capacitance microscopy and spectroscopy
url http://www.nanoscalereslett.com/content/6/1/163
work_keys_str_mv AT bassanifranck memorypropertiesandchargeeffectstudyinsinanocrystalsbyscanningcapacitancemicroscopyandspectroscopy
AT linzhen memorypropertiesandchargeeffectstudyinsinanocrystalsbyscanningcapacitancemicroscopyandspectroscopy
AT bremondgeorges memorypropertiesandchargeeffectstudyinsinanocrystalsbyscanningcapacitancemicroscopyandspectroscopy