Effect of proton irradiation induced localized defect clusters on recovery time and leakage current in silicon photoconductive semiconductor switches
Pulse recovery time in semiconducting devices depends strongly on minority carrier lifetime, bandgap-type-dependent recombination, impurity concentration, and subband placement. In indirect bandgap solids, such as silicon, it is dominated by Shockley–Reed–Hall (SRH) recombination via trap-based reco...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2023-10-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0156536 |