Synthesis and properties of PI composite films using carbon quantum dots as fillers
Polyimide (PI) is widely used in the field of microelectronics because of its excellent thermal, mechanical, optical, and electrical properties. With the development of electronics and information industry, PI as a dielectric material needs to possess low dielectric loss. PI/carbon quantum dots (PI/...
Main Authors: | , , , , , , |
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Format: | Article |
Language: | English |
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De Gruyter
2022-07-01
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Series: | e-Polymers |
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Online Access: | https://doi.org/10.1515/epoly-2022-0054 |
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author | Zhang Yuyin Guo Hongtao Jiang Shaohua Hu Zhaoyu Zha Guojun Liu Kunming Hou Haoqing |
author_facet | Zhang Yuyin Guo Hongtao Jiang Shaohua Hu Zhaoyu Zha Guojun Liu Kunming Hou Haoqing |
author_sort | Zhang Yuyin |
collection | DOAJ |
description | Polyimide (PI) is widely used in the field of microelectronics because of its excellent thermal, mechanical, optical, and electrical properties. With the development of electronics and information industry, PI as a dielectric material needs to possess low dielectric loss. PI/carbon quantum dots (PI/CQDs) composite films with low dielectric loss were prepared by introducing CQDs into PI matrix. At 25°C and 1 kHz voltage, the dielectric loss of pure PI film is about 0.0057. The dielectric loss of PI/CQDs composite film is about 0.0018, which is about 68% lower than that of pure PI film. The dielectric loss of PI/CQD composite film is greatly reduced while the mechanical properties and thermal properties of PI/CQDs composite film roughly remain unchanged. Due to the cross-linking structure formed between CQDs and PI molecular chain, the relative movement of PI molecular chain is hindered. |
first_indexed | 2024-04-11T10:47:13Z |
format | Article |
id | doaj.art-f9b29f494f2e4c7598b6c7a54c37d86f |
institution | Directory Open Access Journal |
issn | 1618-7229 |
language | English |
last_indexed | 2024-04-11T10:47:13Z |
publishDate | 2022-07-01 |
publisher | De Gruyter |
record_format | Article |
series | e-Polymers |
spelling | doaj.art-f9b29f494f2e4c7598b6c7a54c37d86f2022-12-22T04:29:00ZengDe Gruytere-Polymers1618-72292022-07-0122157758410.1515/epoly-2022-0054Synthesis and properties of PI composite films using carbon quantum dots as fillersZhang Yuyin0Guo Hongtao1Jiang Shaohua2Hu Zhaoyu3Zha Guojun4Liu Kunming5Hou Haoqing6College of Chemistry and Chemical Engineering, Jiangxi Normal University, Nanchang, ChinaJiangsu Co-Innovation Center of Efficient Processing and Utilization of Forest Resources, International Innovation Center for Forest Chemicals and Materials, College of Materials Science and Engineering, Nanjing Forestry University, Nanjing, 210037, ChinaJiangsu Co-Innovation Center of Efficient Processing and Utilization of Forest Resources, International Innovation Center for Forest Chemicals and Materials, College of Materials Science and Engineering, Nanjing Forestry University, Nanjing, 210037, ChinaCollege of Chemistry and Chemical Engineering, Jiangxi Normal University, Nanchang, ChinaCollege of Chemistry and Chemical Engineering, Jiangxi Normal University, Nanchang, ChinaFaculty of Materials Metallurgy and Chemistry, Jiangxi University of Science and Technology, Ganzhou 341000, ChinaCollege of Chemistry and Chemical Engineering, Jiangxi Normal University, Nanchang, ChinaPolyimide (PI) is widely used in the field of microelectronics because of its excellent thermal, mechanical, optical, and electrical properties. With the development of electronics and information industry, PI as a dielectric material needs to possess low dielectric loss. PI/carbon quantum dots (PI/CQDs) composite films with low dielectric loss were prepared by introducing CQDs into PI matrix. At 25°C and 1 kHz voltage, the dielectric loss of pure PI film is about 0.0057. The dielectric loss of PI/CQDs composite film is about 0.0018, which is about 68% lower than that of pure PI film. The dielectric loss of PI/CQD composite film is greatly reduced while the mechanical properties and thermal properties of PI/CQDs composite film roughly remain unchanged. Due to the cross-linking structure formed between CQDs and PI molecular chain, the relative movement of PI molecular chain is hindered.https://doi.org/10.1515/epoly-2022-0054picqdscompositesdielectric propertiesmechanical properties |
spellingShingle | Zhang Yuyin Guo Hongtao Jiang Shaohua Hu Zhaoyu Zha Guojun Liu Kunming Hou Haoqing Synthesis and properties of PI composite films using carbon quantum dots as fillers e-Polymers pi cqds composites dielectric properties mechanical properties |
title | Synthesis and properties of PI composite films using carbon quantum dots as fillers |
title_full | Synthesis and properties of PI composite films using carbon quantum dots as fillers |
title_fullStr | Synthesis and properties of PI composite films using carbon quantum dots as fillers |
title_full_unstemmed | Synthesis and properties of PI composite films using carbon quantum dots as fillers |
title_short | Synthesis and properties of PI composite films using carbon quantum dots as fillers |
title_sort | synthesis and properties of pi composite films using carbon quantum dots as fillers |
topic | pi cqds composites dielectric properties mechanical properties |
url | https://doi.org/10.1515/epoly-2022-0054 |
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