Design of Silicon Nitride Edge Coupler for Monolithically Integrated Laser on Silicon Photonic Circuits With Relaxed Alignment Tolerance and High Efficiency

Design of Silicon Nitride Edge Coupler for Monolithically Integrated Laser on Silicon Photonic Circuits With Relaxed Alignment Tolerance and High Efficiency

We propose a bi-layer 5-tip edge coupler in a multilayer silicon nitride-on-silicon (SiN-on-Si) waveguide platform. The coupler is used for the integration between a monolithic 1550 nm laser and a single-mode SiN waveguide. The simulated coupling efficiency is 92.8%. The vertical 1-dB-los...

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Bibliographic Details
Main Authors: Yisu Yang, Kaixiang Gao, Huiyuan Zhang, Huaibing Liu, Xinyuan Lu, Xiaomin Ren, Yongqing Huang
Format: Article
Language:English
Published: IEEE 2022-01-01
Series:IEEE Photonics Journal
Subjects:
Integrated nanophotonic systems
silicon nanophotonics
theory and design
waveguides
Online Access:https://ieeexplore.ieee.org/document/9738435/
Description
Summary:We propose a bi-layer 5-tip edge coupler in a multilayer silicon nitride-on-silicon (SiN-on-Si) waveguide platform. The coupler is used for the integration between a monolithic 1550 nm laser and a single-mode SiN waveguide. The simulated coupling efficiency is 92.8%. The vertical 1-dB-loss misalignment tolerance is as large as 0.5 μm. Broad 1-dB-drop bandwidth (1338 nm to 1700 nm) and small footprint (total length: 38.2 μm) are achieved simultaneously. A broadband bi-layer SiN-Si adiabatic transition cascaded to the edge coupler is designed to couple the laser power into a single-mode Si waveguide at an efficiency of 90.6%. Low-computation-cost electromagnetic numerical simulation and optimization strategies are applied to improve the reverse design of the complex couplers.
ISSN:1943-0655

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