Light Driven Active Transition of Switching Modes in Homogeneous Oxides/Graphene Heterostructure

Light Driven Active Transition of Switching Modes in Homogeneous Oxides/Graphene Heterostructure

Abstract Depending on the mobile species involved in the resistive switching process, redox random access memories and conductive bridge random access memories are widely studied with distinct switching mechanisms. Although the two resistance switching types have faithfully proved to be electrochemi...

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Bibliographic Details
Main Authors: Xiaoli Chen, Kelin Zeng, Xin Zhu, Guanglong Ding, Ting Zou, Chen Zhang, Kui Zhou, Ye Zhou, Su‐Ting Han
Format: Article
Language:English
Published: Wiley 2019-06-01
Series:Advanced Science
Subjects:
graphene
heterostructures
homojunctions
negative differential resistance
titanium oxide
Online Access:https://doi.org/10.1002/advs.201900213

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