Layer-dependent semiconductor-metal transition of SnO/Si(001) heterostructure and device application
Abstract As the downscaling of electronic devices continues, the problems of leakage currents and heat dissipation become more and more serious. To address these issues, new materials and new structures are explored. Here, we propose an interesting heterostructure made of ultrathin SnO layers on Si(...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2017-05-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-017-02832-8 |
| _version_ | 1818842437536186368 |
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| author | Chengcheng Xiao Fang Wang Yao Wang Shengyuan A. Yang Jianzhong Jiang Ming Yang Yunhao Lu Shijie Wang Yuanping Feng |
| author_facet | Chengcheng Xiao Fang Wang Yao Wang Shengyuan A. Yang Jianzhong Jiang Ming Yang Yunhao Lu Shijie Wang Yuanping Feng |
| author_sort | Chengcheng Xiao |
| collection | DOAJ |
| description | Abstract As the downscaling of electronic devices continues, the problems of leakage currents and heat dissipation become more and more serious. To address these issues, new materials and new structures are explored. Here, we propose an interesting heterostructure made of ultrathin SnO layers on Si(001) surface. Our first-principle calculations show that a single layer of SnO on Si(001) surface is a semiconductor, but a bilayer SnO on the same surface is metallic. This metal-semiconductor dichotomy allows construction of single-2D-material-based electronic devices with low contact resistance and low leakage currents. In particular, due to the interaction between Sn and the Si substrate, the semiconducting monolayer-SnO/Si(001) has a highly anisotropic band structure with a much lighter hole effective mass along one direction than that of Si and most other 2D materials, indicating a high carrier mobility. Furthermore, by combining density functional theory and nonequilibrium Green’s function method, we directly investigate the transport characteristics of a field effect transistor based on the proposed heterostructures, which shows very low contact resistance, negligible leakage current, and easy gate control at a compact channel length. |
| first_indexed | 2024-12-19T04:41:58Z |
| format | Article |
| id | doaj.art-fa3a69bc665d4590a5b4aff6a3cf9c34 |
| institution | Directory Open Access Journal |
| issn | 2045-2322 |
| language | English |
| last_indexed | 2024-12-19T04:41:58Z |
| publishDate | 2017-05-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj.art-fa3a69bc665d4590a5b4aff6a3cf9c342022-12-21T20:35:36ZengNature PortfolioScientific Reports2045-23222017-05-01711910.1038/s41598-017-02832-8Layer-dependent semiconductor-metal transition of SnO/Si(001) heterostructure and device applicationChengcheng Xiao0Fang Wang1Yao Wang2Shengyuan A. Yang3Jianzhong Jiang4Ming Yang5Yunhao Lu6Shijie Wang7Yuanping Feng8State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang UniversityState Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang UniversityState Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang UniversityResearch Laboratory for Quantum Materials, Singapore University of Technology and DesignState Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang UniversityInstitute of Materials Research and Engineering, Agency for Science, Technology and Research (A*-STAR)State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang UniversityInstitute of Materials Research and Engineering, Agency for Science, Technology and Research (A*-STAR)Department of Physics, National University of SingaporeAbstract As the downscaling of electronic devices continues, the problems of leakage currents and heat dissipation become more and more serious. To address these issues, new materials and new structures are explored. Here, we propose an interesting heterostructure made of ultrathin SnO layers on Si(001) surface. Our first-principle calculations show that a single layer of SnO on Si(001) surface is a semiconductor, but a bilayer SnO on the same surface is metallic. This metal-semiconductor dichotomy allows construction of single-2D-material-based electronic devices with low contact resistance and low leakage currents. In particular, due to the interaction between Sn and the Si substrate, the semiconducting monolayer-SnO/Si(001) has a highly anisotropic band structure with a much lighter hole effective mass along one direction than that of Si and most other 2D materials, indicating a high carrier mobility. Furthermore, by combining density functional theory and nonequilibrium Green’s function method, we directly investigate the transport characteristics of a field effect transistor based on the proposed heterostructures, which shows very low contact resistance, negligible leakage current, and easy gate control at a compact channel length.https://doi.org/10.1038/s41598-017-02832-8 |
| spellingShingle | Chengcheng Xiao Fang Wang Yao Wang Shengyuan A. Yang Jianzhong Jiang Ming Yang Yunhao Lu Shijie Wang Yuanping Feng Layer-dependent semiconductor-metal transition of SnO/Si(001) heterostructure and device application Scientific Reports |
| title | Layer-dependent semiconductor-metal transition of SnO/Si(001) heterostructure and device application |
| title_full | Layer-dependent semiconductor-metal transition of SnO/Si(001) heterostructure and device application |
| title_fullStr | Layer-dependent semiconductor-metal transition of SnO/Si(001) heterostructure and device application |
| title_full_unstemmed | Layer-dependent semiconductor-metal transition of SnO/Si(001) heterostructure and device application |
| title_short | Layer-dependent semiconductor-metal transition of SnO/Si(001) heterostructure and device application |
| title_sort | layer dependent semiconductor metal transition of sno si 001 heterostructure and device application |
| url | https://doi.org/10.1038/s41598-017-02832-8 |
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