Chalcogen-hyperdoped germanium for short-wavelength infrared photodetection

Obtaining short-wavelength-infrared (SWIR; 1.4 μm–3.0 μm) room-temperature photodetection in a low-cost, group IV semiconductor is desirable for numerous applications. We demonstrate a non-equilibrium method for hyperdoping germanium with selenium or tellurium for dopant-mediated SWIR photodetection...

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Main Authors: Hemi H. Gandhi, David Pastor, Tuan T. Tran, Stefan Kalchmair, Lachlan A. Smillie, Jonathan P. Mailoa, Ruggero Milazzo, Enrico Napolitani, Marko Loncar, James S. Williams, Michael J. Aziz, Eric Mazur
Format: Article
Language:English
Published: AIP Publishing LLC 2020-07-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0008281
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author Hemi H. Gandhi
David Pastor
Tuan T. Tran
Stefan Kalchmair
Lachlan A. Smillie
Jonathan P. Mailoa
Ruggero Milazzo
Enrico Napolitani
Marko Loncar
James S. Williams
Michael J. Aziz
Eric Mazur
author_facet Hemi H. Gandhi
David Pastor
Tuan T. Tran
Stefan Kalchmair
Lachlan A. Smillie
Jonathan P. Mailoa
Ruggero Milazzo
Enrico Napolitani
Marko Loncar
James S. Williams
Michael J. Aziz
Eric Mazur
author_sort Hemi H. Gandhi
collection DOAJ
description Obtaining short-wavelength-infrared (SWIR; 1.4 μm–3.0 μm) room-temperature photodetection in a low-cost, group IV semiconductor is desirable for numerous applications. We demonstrate a non-equilibrium method for hyperdoping germanium with selenium or tellurium for dopant-mediated SWIR photodetection. By ion-implanting Se or Te into Ge wafers and restoring crystallinity with pulsed laser melting induced rapid solidification, we obtain single crystalline materials with peak Se and Te concentrations of 1020 cm−3 (104 times the solubility limits). These hyperdoped materials exhibit sub-bandgap absorption of light up to wavelengths of at least 3.0 μm, with their sub-bandgap optical absorption coefficients comparable to those of commercial SWIR photodetection materials. Although previous studies of Ge-based photodetectors have reported a sub-bandgap optoelectronic response only at low temperature, we report room-temperature sub-bandgap SWIR photodetection at wavelengths as long as 3.0 μm from rudimentary hyperdoped Ge:Se and Ge:Te photodetectors.
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spelling doaj.art-fa3be7a8a9254ba99d46f6ff635d80212022-12-21T21:09:33ZengAIP Publishing LLCAIP Advances2158-32262020-07-01107075028075028-610.1063/5.0008281Chalcogen-hyperdoped germanium for short-wavelength infrared photodetectionHemi H. Gandhi0David Pastor1Tuan T. Tran2Stefan Kalchmair3Lachlan A. Smillie4Jonathan P. Mailoa5Ruggero Milazzo6Enrico Napolitani7Marko Loncar8James S. Williams9Michael J. Aziz10Eric Mazur11Harvard John A. Paulson School of Engineering and Applied Sciences, Cambridge, Massachusetts 02138, USAHarvard John A. Paulson School of Engineering and Applied Sciences, Cambridge, Massachusetts 02138, USADepartment of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, ACT 0200, AustraliaHarvard John A. Paulson School of Engineering and Applied Sciences, Cambridge, Massachusetts 02138, USADepartment of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, ACT 0200, AustraliaDepartment of Physics and Astronomy, Ångström Laboratory, Uppsala University, P.O. Box 516, SE-751 20 Uppsala, SwedenDipartimento di Fisica e Astronomia, Università di Padova and CNR-IMM, Via Marzolo 8, I-35131 Padova, ItalyDipartimento di Fisica e Astronomia, Università di Padova and CNR-IMM, Via Marzolo 8, I-35131 Padova, ItalyHarvard John A. Paulson School of Engineering and Applied Sciences, Cambridge, Massachusetts 02138, USADepartment of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, ACT 0200, AustraliaHarvard John A. Paulson School of Engineering and Applied Sciences, Cambridge, Massachusetts 02138, USAHarvard John A. Paulson School of Engineering and Applied Sciences, Cambridge, Massachusetts 02138, USAObtaining short-wavelength-infrared (SWIR; 1.4 μm–3.0 μm) room-temperature photodetection in a low-cost, group IV semiconductor is desirable for numerous applications. We demonstrate a non-equilibrium method for hyperdoping germanium with selenium or tellurium for dopant-mediated SWIR photodetection. By ion-implanting Se or Te into Ge wafers and restoring crystallinity with pulsed laser melting induced rapid solidification, we obtain single crystalline materials with peak Se and Te concentrations of 1020 cm−3 (104 times the solubility limits). These hyperdoped materials exhibit sub-bandgap absorption of light up to wavelengths of at least 3.0 μm, with their sub-bandgap optical absorption coefficients comparable to those of commercial SWIR photodetection materials. Although previous studies of Ge-based photodetectors have reported a sub-bandgap optoelectronic response only at low temperature, we report room-temperature sub-bandgap SWIR photodetection at wavelengths as long as 3.0 μm from rudimentary hyperdoped Ge:Se and Ge:Te photodetectors.http://dx.doi.org/10.1063/5.0008281
spellingShingle Hemi H. Gandhi
David Pastor
Tuan T. Tran
Stefan Kalchmair
Lachlan A. Smillie
Jonathan P. Mailoa
Ruggero Milazzo
Enrico Napolitani
Marko Loncar
James S. Williams
Michael J. Aziz
Eric Mazur
Chalcogen-hyperdoped germanium for short-wavelength infrared photodetection
AIP Advances
title Chalcogen-hyperdoped germanium for short-wavelength infrared photodetection
title_full Chalcogen-hyperdoped germanium for short-wavelength infrared photodetection
title_fullStr Chalcogen-hyperdoped germanium for short-wavelength infrared photodetection
title_full_unstemmed Chalcogen-hyperdoped germanium for short-wavelength infrared photodetection
title_short Chalcogen-hyperdoped germanium for short-wavelength infrared photodetection
title_sort chalcogen hyperdoped germanium for short wavelength infrared photodetection
url http://dx.doi.org/10.1063/5.0008281
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