Direct writing of single germanium vacancy center arrays in diamond
Color centers in diamond are promising solid-state qubits for scalable quantum photonics applications. Amongst many defects, those with inversion symmetry are of an interest due to their promising optical properties. In this work, we demonstrate a maskless implantation of an array of bright, single...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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IOP Publishing
2018-01-01
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| Series: | New Journal of Physics |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/1367-2630/aaf2ac |
| _version_ | 1797750593046970368 |
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| author | Yu Zhou Zhao Mu Giorgio Adamo Sven Bauerdick Axel Rudzinski Igor Aharonovich Wei-bo Gao |
| author_facet | Yu Zhou Zhao Mu Giorgio Adamo Sven Bauerdick Axel Rudzinski Igor Aharonovich Wei-bo Gao |
| author_sort | Yu Zhou |
| collection | DOAJ |
| description | Color centers in diamond are promising solid-state qubits for scalable quantum photonics applications. Amongst many defects, those with inversion symmetry are of an interest due to their promising optical properties. In this work, we demonstrate a maskless implantation of an array of bright, single germanium vacancy (GeV) centers in diamond. Employing the direct focused ion beam technique, single GeV emitters are engineered with the spatial accuracy of tens of nanometers. The single GeV creation ratio reaches as high as 53% with the dose of 200 Ge ^+ ions per spot. The presented fabrication method is promising for future nanofabrication of integrated photonic structures with GeV emitters as a leading platform for spin-spin interactions. |
| first_indexed | 2024-03-12T16:35:01Z |
| format | Article |
| id | doaj.art-fa50a7ab5f9648c383596cfa0dee5919 |
| institution | Directory Open Access Journal |
| issn | 1367-2630 |
| language | English |
| last_indexed | 2024-03-12T16:35:01Z |
| publishDate | 2018-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | New Journal of Physics |
| spelling | doaj.art-fa50a7ab5f9648c383596cfa0dee59192023-08-08T14:56:23ZengIOP PublishingNew Journal of Physics1367-26302018-01-01201212500410.1088/1367-2630/aaf2acDirect writing of single germanium vacancy center arrays in diamondYu Zhou0Zhao Mu1Giorgio Adamo2Sven Bauerdick3Axel Rudzinski4Igor Aharonovich5Wei-bo Gao6Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University , Singapore 637371, SingaporeDivision of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University , Singapore 637371, SingaporeDivision of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University , Singapore 637371, Singapore; The Photonics Institute and Centre for Disruptive Photonic Technologies, Nanyang Technological University , 637371 Singapore, SingaporeRaith GmbH, D-44263 Dortmund, GermanyRaith GmbH, D-44263 Dortmund, GermanyInstitute of Biomedical Materials and Devices (IBMD), Faculty of Science, University of Technology Sydney , Ultimo, NSW, 2007, AustraliaDivision of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University , Singapore 637371, Singapore; The Photonics Institute and Centre for Disruptive Photonic Technologies, Nanyang Technological University , 637371 Singapore, SingaporeColor centers in diamond are promising solid-state qubits for scalable quantum photonics applications. Amongst many defects, those with inversion symmetry are of an interest due to their promising optical properties. In this work, we demonstrate a maskless implantation of an array of bright, single germanium vacancy (GeV) centers in diamond. Employing the direct focused ion beam technique, single GeV emitters are engineered with the spatial accuracy of tens of nanometers. The single GeV creation ratio reaches as high as 53% with the dose of 200 Ge ^+ ions per spot. The presented fabrication method is promising for future nanofabrication of integrated photonic structures with GeV emitters as a leading platform for spin-spin interactions.https://doi.org/10.1088/1367-2630/aaf2acconversion yieldgermanium vacancy centersingle photon emitter |
| spellingShingle | Yu Zhou Zhao Mu Giorgio Adamo Sven Bauerdick Axel Rudzinski Igor Aharonovich Wei-bo Gao Direct writing of single germanium vacancy center arrays in diamond New Journal of Physics conversion yield germanium vacancy center single photon emitter |
| title | Direct writing of single germanium vacancy center arrays in diamond |
| title_full | Direct writing of single germanium vacancy center arrays in diamond |
| title_fullStr | Direct writing of single germanium vacancy center arrays in diamond |
| title_full_unstemmed | Direct writing of single germanium vacancy center arrays in diamond |
| title_short | Direct writing of single germanium vacancy center arrays in diamond |
| title_sort | direct writing of single germanium vacancy center arrays in diamond |
| topic | conversion yield germanium vacancy center single photon emitter |
| url | https://doi.org/10.1088/1367-2630/aaf2ac |
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