Survey of Reliability Research on 3D Packaged Memory
As the core carrier of information storage, a semiconductor memory device is a basic product with a large volume that is widespread in the integrated circuit industry. With the rapid development of semiconductor manufacturing processes and materials, the internal structure of memory has gradually sh...
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-06-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/12/12/2709 |
| _version_ | 1797595143421820928 |
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| author | Shuai Zhou Kaixue Ma Yugong Wu Peng Liu Xianghong Hu Guojian Nie Yan Ren Baojun Qiu Nian Cai Shaoqiu Xu Han Wang |
| author_facet | Shuai Zhou Kaixue Ma Yugong Wu Peng Liu Xianghong Hu Guojian Nie Yan Ren Baojun Qiu Nian Cai Shaoqiu Xu Han Wang |
| author_sort | Shuai Zhou |
| collection | DOAJ |
| description | As the core carrier of information storage, a semiconductor memory device is a basic product with a large volume that is widespread in the integrated circuit industry. With the rapid development of semiconductor manufacturing processes and materials, the internal structure of memory has gradually shifted from a 2D planar packaging structure to a 3D packaging structure to meet industry demands for high-frequency, high-speed, and large-capacity devices with low power consumption. However, advanced 3D packaging technology can pose some reliability risks, making devices prone to failure, especially when used in harsh environmental conditions, including temperature changes, high temperature and humidity levels, and mechanical stress. In this paper, the authors introduce the typical structure characteristics of 3D packaged memory; analyze the reasons for device failure caused by stress; summarize current research methods that utilize temperature, mechanical and hygrothermal theories, and failure models; and present future challenges and directions regarding the reliability research of 3D packaged memory. |
| first_indexed | 2024-03-11T02:33:15Z |
| format | Article |
| id | doaj.art-fae056979f3b43e1be07958162a7bc27 |
| institution | Directory Open Access Journal |
| issn | 2079-9292 |
| language | English |
| last_indexed | 2024-03-11T02:33:15Z |
| publishDate | 2023-06-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Electronics |
| spelling | doaj.art-fae056979f3b43e1be07958162a7bc272023-11-18T10:09:31ZengMDPI AGElectronics2079-92922023-06-011212270910.3390/electronics12122709Survey of Reliability Research on 3D Packaged MemoryShuai Zhou0Kaixue Ma1Yugong Wu2Peng Liu3Xianghong Hu4Guojian Nie5Yan Ren6Baojun Qiu7Nian Cai8Shaoqiu Xu9Han Wang10School of Microelectronics, Tianjin University, Tianjin 300072, ChinaSchool of Microelectronics, Tianjin University, Tianjin 300072, ChinaSchool of Microelectronics, Tianjin University, Tianjin 300072, ChinaChina Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, ChinaChina Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, ChinaChina Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, ChinaChina Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, ChinaChina Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, ChinaSchool of Information Engineering, Guangdong University of Technology, Guangzhou 510006, ChinaSchool of Information Engineering, Guangdong University of Technology, Guangzhou 510006, ChinaSchool of Information Engineering, Guangdong University of Technology, Guangzhou 510006, ChinaAs the core carrier of information storage, a semiconductor memory device is a basic product with a large volume that is widespread in the integrated circuit industry. With the rapid development of semiconductor manufacturing processes and materials, the internal structure of memory has gradually shifted from a 2D planar packaging structure to a 3D packaging structure to meet industry demands for high-frequency, high-speed, and large-capacity devices with low power consumption. However, advanced 3D packaging technology can pose some reliability risks, making devices prone to failure, especially when used in harsh environmental conditions, including temperature changes, high temperature and humidity levels, and mechanical stress. In this paper, the authors introduce the typical structure characteristics of 3D packaged memory; analyze the reasons for device failure caused by stress; summarize current research methods that utilize temperature, mechanical and hygrothermal theories, and failure models; and present future challenges and directions regarding the reliability research of 3D packaged memory.https://www.mdpi.com/2079-9292/12/12/27093D packagingmemoryenvironmental loadreliabilityreview |
| spellingShingle | Shuai Zhou Kaixue Ma Yugong Wu Peng Liu Xianghong Hu Guojian Nie Yan Ren Baojun Qiu Nian Cai Shaoqiu Xu Han Wang Survey of Reliability Research on 3D Packaged Memory Electronics 3D packaging memory environmental load reliability review |
| title | Survey of Reliability Research on 3D Packaged Memory |
| title_full | Survey of Reliability Research on 3D Packaged Memory |
| title_fullStr | Survey of Reliability Research on 3D Packaged Memory |
| title_full_unstemmed | Survey of Reliability Research on 3D Packaged Memory |
| title_short | Survey of Reliability Research on 3D Packaged Memory |
| title_sort | survey of reliability research on 3d packaged memory |
| topic | 3D packaging memory environmental load reliability review |
| url | https://www.mdpi.com/2079-9292/12/12/2709 |
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