Overdamped phase diffusion in hBN encapsulated graphene Josephson junctions
We investigate the zero-bias behavior of Josephson junctions made of encapsulated graphene boron nitride heterostructures in the long ballistic junction regime. For temperatures down to 2.7 K, the junctions appear nonhysteretic with respect to the switching and retrapping currents I_{C} and I_{R}. A...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
American Physical Society
2022-06-01
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| Series: | Physical Review Research |
| Online Access: | http://doi.org/10.1103/PhysRevResearch.4.023203 |
| _version_ | 1797210760227586048 |
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| author | J. Tang M. T. Wei A. Sharma E. G. Arnault A. Seredinski Y. Mehta K. Watanabe T. Taniguchi F. Amet I. Borzenets |
| author_facet | J. Tang M. T. Wei A. Sharma E. G. Arnault A. Seredinski Y. Mehta K. Watanabe T. Taniguchi F. Amet I. Borzenets |
| author_sort | J. Tang |
| collection | DOAJ |
| description | We investigate the zero-bias behavior of Josephson junctions made of encapsulated graphene boron nitride heterostructures in the long ballistic junction regime. For temperatures down to 2.7 K, the junctions appear nonhysteretic with respect to the switching and retrapping currents I_{C} and I_{R}. A small nonzero resistance is observed even around zero-bias current and scales with temperature as dictated by the phase diffusion mechanism. By varying the graphene carrier concentration we are able to confirm that the observed phase diffusion mechanism follows the trend for an overdamped Josephson junction. This is in contrast with the majority of graphene-based junctions which are underdamped and shorted by the environment at high frequencies. |
| first_indexed | 2024-04-24T10:15:43Z |
| format | Article |
| id | doaj.art-fb0edc92ddb6405689f56e58a4ef326d |
| institution | Directory Open Access Journal |
| issn | 2643-1564 |
| language | English |
| last_indexed | 2024-04-24T10:15:43Z |
| publishDate | 2022-06-01 |
| publisher | American Physical Society |
| record_format | Article |
| series | Physical Review Research |
| spelling | doaj.art-fb0edc92ddb6405689f56e58a4ef326d2024-04-12T17:21:45ZengAmerican Physical SocietyPhysical Review Research2643-15642022-06-014202320310.1103/PhysRevResearch.4.023203Overdamped phase diffusion in hBN encapsulated graphene Josephson junctionsJ. TangM. T. WeiA. SharmaE. G. ArnaultA. SeredinskiY. MehtaK. WatanabeT. TaniguchiF. AmetI. BorzenetsWe investigate the zero-bias behavior of Josephson junctions made of encapsulated graphene boron nitride heterostructures in the long ballistic junction regime. For temperatures down to 2.7 K, the junctions appear nonhysteretic with respect to the switching and retrapping currents I_{C} and I_{R}. A small nonzero resistance is observed even around zero-bias current and scales with temperature as dictated by the phase diffusion mechanism. By varying the graphene carrier concentration we are able to confirm that the observed phase diffusion mechanism follows the trend for an overdamped Josephson junction. This is in contrast with the majority of graphene-based junctions which are underdamped and shorted by the environment at high frequencies.http://doi.org/10.1103/PhysRevResearch.4.023203 |
| spellingShingle | J. Tang M. T. Wei A. Sharma E. G. Arnault A. Seredinski Y. Mehta K. Watanabe T. Taniguchi F. Amet I. Borzenets Overdamped phase diffusion in hBN encapsulated graphene Josephson junctions Physical Review Research |
| title | Overdamped phase diffusion in hBN encapsulated graphene Josephson junctions |
| title_full | Overdamped phase diffusion in hBN encapsulated graphene Josephson junctions |
| title_fullStr | Overdamped phase diffusion in hBN encapsulated graphene Josephson junctions |
| title_full_unstemmed | Overdamped phase diffusion in hBN encapsulated graphene Josephson junctions |
| title_short | Overdamped phase diffusion in hBN encapsulated graphene Josephson junctions |
| title_sort | overdamped phase diffusion in hbn encapsulated graphene josephson junctions |
| url | http://doi.org/10.1103/PhysRevResearch.4.023203 |
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