Optical chalcogenide glass coats for semiconductor sources of ir-radiation
The article demonstrates the possibility of using the multi component chalcogenide glasses Ge(Pb)–Sb(Ga)–S(Se) as dielectric materials for optical covering of semiconductor radiating active elements which function in the spectral diapason 2,5—5,0 mkm. An effective way to put optical covering of vari...
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Format: | Article |
Language: | English |
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Politehperiodika
2009-08-01
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Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
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Online Access: | http://www.tkea.com.ua/tkea/2009/4_2009/pdf/06.zip |
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author | Kabatsiy V. М. |
author_facet | Kabatsiy V. М. |
author_sort | Kabatsiy V. М. |
collection | DOAJ |
description | The article demonstrates the possibility of using the multi component chalcogenide glasses Ge(Pb)–Sb(Ga)–S(Se) as dielectric materials for optical covering of semiconductor radiating active elements which function in the spectral diapason 2,5—5,0 mkm. An effective way to put optical covering of various shapes has been developed. it is possible to narrow the diagram of direction along the radiating axis of the active elements to 15° and increase three or four times the capacity of its radiation. |
first_indexed | 2024-04-12T05:40:31Z |
format | Article |
id | doaj.art-fb26087f4aa240daa3a11fe077ac5e49 |
institution | Directory Open Access Journal |
issn | 2225-5818 |
language | English |
last_indexed | 2024-04-12T05:40:31Z |
publishDate | 2009-08-01 |
publisher | Politehperiodika |
record_format | Article |
series | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
spelling | doaj.art-fb26087f4aa240daa3a11fe077ac5e492022-12-22T03:45:40ZengPolitehperiodikaTekhnologiya i Konstruirovanie v Elektronnoi Apparature2225-58182009-08-0143844Optical chalcogenide glass coats for semiconductor sources of ir-radiationKabatsiy V. М.The article demonstrates the possibility of using the multi component chalcogenide glasses Ge(Pb)–Sb(Ga)–S(Se) as dielectric materials for optical covering of semiconductor radiating active elements which function in the spectral diapason 2,5—5,0 mkm. An effective way to put optical covering of various shapes has been developed. it is possible to narrow the diagram of direction along the radiating axis of the active elements to 15° and increase three or four times the capacity of its radiation.http://www.tkea.com.ua/tkea/2009/4_2009/pdf/06.zipsemiconductor sources of IR radiationactive emitting elementschalcogenide glassoptical coatings |
spellingShingle | Kabatsiy V. М. Optical chalcogenide glass coats for semiconductor sources of ir-radiation Tekhnologiya i Konstruirovanie v Elektronnoi Apparature semiconductor sources of IR radiation active emitting elements chalcogenide glass optical coatings |
title | Optical chalcogenide glass coats for semiconductor sources of ir-radiation |
title_full | Optical chalcogenide glass coats for semiconductor sources of ir-radiation |
title_fullStr | Optical chalcogenide glass coats for semiconductor sources of ir-radiation |
title_full_unstemmed | Optical chalcogenide glass coats for semiconductor sources of ir-radiation |
title_short | Optical chalcogenide glass coats for semiconductor sources of ir-radiation |
title_sort | optical chalcogenide glass coats for semiconductor sources of ir radiation |
topic | semiconductor sources of IR radiation active emitting elements chalcogenide glass optical coatings |
url | http://www.tkea.com.ua/tkea/2009/4_2009/pdf/06.zip |
work_keys_str_mv | AT kabatsiyvm opticalchalcogenideglasscoatsforsemiconductorsourcesofirradiation |