pH Measurement at Elevated Temperature with Vessel Gate and Oxygen-Terminated Diamond Solution Gate Field Effect Transistors
Diamond has many appealing properties, including biocompatibility, ease of surface modification, and chemical–physical stability. In this study, the temperature dependence of the pH-sensitivity of a oxygen-terminated boron-doped diamond solution gate FET (C-O BDD SGFET) is reported. The C-O BDD SGFE...
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| Format: | Article |
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MDPI AG
2022-02-01
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| Series: | Sensors |
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| Online Access: | https://www.mdpi.com/1424-8220/22/5/1807 |
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| author | Shuto Kawaguchi Reona Nomoto Hirotaka Sato Teruaki Takarada Yu Hao Chang Hiroshi Kawarada |
| author_facet | Shuto Kawaguchi Reona Nomoto Hirotaka Sato Teruaki Takarada Yu Hao Chang Hiroshi Kawarada |
| author_sort | Shuto Kawaguchi |
| collection | DOAJ |
| description | Diamond has many appealing properties, including biocompatibility, ease of surface modification, and chemical–physical stability. In this study, the temperature dependence of the pH-sensitivity of a oxygen-terminated boron-doped diamond solution gate FET (C-O BDD SGFET) is reported. The C-O BDD SGFET operated in an electrolyte solution at 95 °C. At 80 °C, the pH sensitivity of C-O BDD SGFET dropped to 4.27 mV/pH. As a result, we succeeded in developing a highly sensitive pH sensing system at −54.6 mV/pH at 80 °C by combining it with a highly pH sensitive stainless-steel vessel. |
| first_indexed | 2024-03-09T20:21:54Z |
| format | Article |
| id | doaj.art-fb30a6af892a44ba8ed68f0097e1adaf |
| institution | Directory Open Access Journal |
| issn | 1424-8220 |
| language | English |
| last_indexed | 2024-03-09T20:21:54Z |
| publishDate | 2022-02-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Sensors |
| spelling | doaj.art-fb30a6af892a44ba8ed68f0097e1adaf2023-11-23T23:46:31ZengMDPI AGSensors1424-82202022-02-01225180710.3390/s22051807pH Measurement at Elevated Temperature with Vessel Gate and Oxygen-Terminated Diamond Solution Gate Field Effect TransistorsShuto Kawaguchi0Reona Nomoto1Hirotaka Sato2Teruaki Takarada3Yu Hao Chang4Hiroshi Kawarada5Graduate School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555, JapanGraduate School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555, JapanGraduate School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555, JapanGraduate School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555, JapanGraduate School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555, JapanGraduate School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555, JapanDiamond has many appealing properties, including biocompatibility, ease of surface modification, and chemical–physical stability. In this study, the temperature dependence of the pH-sensitivity of a oxygen-terminated boron-doped diamond solution gate FET (C-O BDD SGFET) is reported. The C-O BDD SGFET operated in an electrolyte solution at 95 °C. At 80 °C, the pH sensitivity of C-O BDD SGFET dropped to 4.27 mV/pH. As a result, we succeeded in developing a highly sensitive pH sensing system at −54.6 mV/pH at 80 °C by combining it with a highly pH sensitive stainless-steel vessel.https://www.mdpi.com/1424-8220/22/5/1807boron-doped diamondpH insensitivestainless-steel vesseldiamond solution gate field effect transistorhigh temperature |
| spellingShingle | Shuto Kawaguchi Reona Nomoto Hirotaka Sato Teruaki Takarada Yu Hao Chang Hiroshi Kawarada pH Measurement at Elevated Temperature with Vessel Gate and Oxygen-Terminated Diamond Solution Gate Field Effect Transistors Sensors boron-doped diamond pH insensitive stainless-steel vessel diamond solution gate field effect transistor high temperature |
| title | pH Measurement at Elevated Temperature with Vessel Gate and Oxygen-Terminated Diamond Solution Gate Field Effect Transistors |
| title_full | pH Measurement at Elevated Temperature with Vessel Gate and Oxygen-Terminated Diamond Solution Gate Field Effect Transistors |
| title_fullStr | pH Measurement at Elevated Temperature with Vessel Gate and Oxygen-Terminated Diamond Solution Gate Field Effect Transistors |
| title_full_unstemmed | pH Measurement at Elevated Temperature with Vessel Gate and Oxygen-Terminated Diamond Solution Gate Field Effect Transistors |
| title_short | pH Measurement at Elevated Temperature with Vessel Gate and Oxygen-Terminated Diamond Solution Gate Field Effect Transistors |
| title_sort | ph measurement at elevated temperature with vessel gate and oxygen terminated diamond solution gate field effect transistors |
| topic | boron-doped diamond pH insensitive stainless-steel vessel diamond solution gate field effect transistor high temperature |
| url | https://www.mdpi.com/1424-8220/22/5/1807 |
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