Active Photonic Band-Gap Switch Based on GaInNAs Multiquantum Well
GaInNAs has been introduced to design an active switch operating at wavelength <formula formulatype="inline"> <tex Notation="TeX">$\lambda = 1.2855\ \mu\hbox{m}$</tex></formula> having high selectivity. The device is made of a mono-dimensional periodic pho...
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| Language: | English |
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IEEE
2012-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/6322997/ |
| _version_ | 1818417481763520512 |
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| author | Giovanna Calo Dimitris Alexandropoulos Vincenzo Petruzzelli |
| author_facet | Giovanna Calo Dimitris Alexandropoulos Vincenzo Petruzzelli |
| author_sort | Giovanna Calo |
| collection | DOAJ |
| description | GaInNAs has been introduced to design an active switch operating at wavelength <formula formulatype="inline"> <tex Notation="TeX">$\lambda = 1.2855\ \mu\hbox{m}$</tex></formula> having high selectivity. The device is made of a mono-dimensional periodic photonic band-gap structure constituted by alternating ridge waveguide layers with different ridge heights. The periodic waveguiding structure has been designed to show the band gap in correspondence of the wavelength range where the dilute nitride active material experiences maximum gain. As an example, the performances of the switch under electrical control are crosstalk <formula formulatype="inline"><tex Notation="TeX">$\hbox{CT} = -14.1\ \hbox{dB}$</tex></formula>, gain in the on-state <formula formulatype="inline"><tex Notation="TeX">${\rm G} = 7.6\ \hbox{dB}$</tex></formula>, and bandwidth <formula formulatype="inline"><tex Notation="TeX">$\Delta\lambda_{-10\,{\rm dB}} = 1.5\ \hbox{nm}$</tex></formula>. By increasing the input power above the optical threshold value of the gain saturation, the switching performance worsens in terms of crosstalk and gain, but the wavelength selectivity improves, since the bandwidth decreases down to <formula formulatype="inline"><tex Notation="TeX">$\Delta\lambda_{-10\,{\rm dB}} = 0.8\ \hbox{nm}$</tex></formula> for the input optical power <formula formulatype="inline"><tex Notation="TeX">${\rm P}_{i} = 20\ \hbox{mW}$</tex></formula>. |
| first_indexed | 2024-12-14T12:07:28Z |
| format | Article |
| id | doaj.art-fb542881596e400f8a1e79ffd129b26c |
| institution | Directory Open Access Journal |
| issn | 1943-0655 |
| language | English |
| last_indexed | 2024-12-14T12:07:28Z |
| publishDate | 2012-01-01 |
| publisher | IEEE |
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| series | IEEE Photonics Journal |
| spelling | doaj.art-fb542881596e400f8a1e79ffd129b26c2022-12-21T23:01:50ZengIEEEIEEE Photonics Journal1943-06552012-01-01451936194610.1109/JPHOT.2012.22201286322997Active Photonic Band-Gap Switch Based on GaInNAs Multiquantum WellGiovanna Calo0Dimitris Alexandropoulos1Vincenzo Petruzzelli2<formula formulatype="inline"><tex Notation="TeX">$^{1}$</tex></formula>Dipartimento di Elettrotecnica ed Elettronica, Politecnico di Bari, Bari, Italy<formula formulatype="inline"><tex Notation="TeX">$^{2}$</tex></formula> Department of Materials Science, University of Patras, Patras, GreeceDipartimento di Elettrotecnica ed Elettronica, Politecnico di Bari , Bari, ItalyGaInNAs has been introduced to design an active switch operating at wavelength <formula formulatype="inline"> <tex Notation="TeX">$\lambda = 1.2855\ \mu\hbox{m}$</tex></formula> having high selectivity. The device is made of a mono-dimensional periodic photonic band-gap structure constituted by alternating ridge waveguide layers with different ridge heights. The periodic waveguiding structure has been designed to show the band gap in correspondence of the wavelength range where the dilute nitride active material experiences maximum gain. As an example, the performances of the switch under electrical control are crosstalk <formula formulatype="inline"><tex Notation="TeX">$\hbox{CT} = -14.1\ \hbox{dB}$</tex></formula>, gain in the on-state <formula formulatype="inline"><tex Notation="TeX">${\rm G} = 7.6\ \hbox{dB}$</tex></formula>, and bandwidth <formula formulatype="inline"><tex Notation="TeX">$\Delta\lambda_{-10\,{\rm dB}} = 1.5\ \hbox{nm}$</tex></formula>. By increasing the input power above the optical threshold value of the gain saturation, the switching performance worsens in terms of crosstalk and gain, but the wavelength selectivity improves, since the bandwidth decreases down to <formula formulatype="inline"><tex Notation="TeX">$\Delta\lambda_{-10\,{\rm dB}} = 0.8\ \hbox{nm}$</tex></formula> for the input optical power <formula formulatype="inline"><tex Notation="TeX">${\rm P}_{i} = 20\ \hbox{mW}$</tex></formula>.https://ieeexplore.ieee.org/document/6322997/Photonic crystals, quantum well devices, semiconductor materials, optical switches |
| spellingShingle | Giovanna Calo Dimitris Alexandropoulos Vincenzo Petruzzelli Active Photonic Band-Gap Switch Based on GaInNAs Multiquantum Well IEEE Photonics Journal Photonic crystals, quantum well devices, semiconductor materials, optical switches |
| title | Active Photonic Band-Gap Switch Based on GaInNAs Multiquantum Well |
| title_full | Active Photonic Band-Gap Switch Based on GaInNAs Multiquantum Well |
| title_fullStr | Active Photonic Band-Gap Switch Based on GaInNAs Multiquantum Well |
| title_full_unstemmed | Active Photonic Band-Gap Switch Based on GaInNAs Multiquantum Well |
| title_short | Active Photonic Band-Gap Switch Based on GaInNAs Multiquantum Well |
| title_sort | active photonic band gap switch based on gainnas multiquantum well |
| topic | Photonic crystals, quantum well devices, semiconductor materials, optical switches |
| url | https://ieeexplore.ieee.org/document/6322997/ |
| work_keys_str_mv | AT giovannacalo activephotonicbandgapswitchbasedongainnasmultiquantumwell AT dimitrisalexandropoulos activephotonicbandgapswitchbasedongainnasmultiquantumwell AT vincenzopetruzzelli activephotonicbandgapswitchbasedongainnasmultiquantumwell |