Magnetoelectric Induced Switching of Perpendicular Exchange Bias Using 30-nm-Thick Cr<sub>2</sub>O<sub>3</sub> Thin Film
Magnetoelectric (ME) effect is a result of the interplay between magnetism and electric field and now, it is regarded as a principle that can be applied to the technique of controlling the antiferromagnetic (AFM) domain state. The ME-controlled AFM domain state can be read out by the magnetization o...
Main Authors: | Yu Shiratsuchi, Yiran Tao, Kentaro Toyoki, Ryoichi Nakatani |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2021-03-01
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Series: | Magnetochemistry |
Subjects: | |
Online Access: | https://www.mdpi.com/2312-7481/7/3/36 |
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