Simulation and theoretical study of AlGaN-based deep-ultraviolet light-emitting diodes with a stepped electron barrier layer
Owing to the COVID-19 outbreak, sterilization of deep-ultraviolet light-emitting diodes (DUV LEDs) has attracted increasing attention. Effectively improving the radiative recombination efficiency and mitigating the efficiency degradation, mainly caused by electron leakage and nonradiative recombinat...
Main Authors: | Fengyi Zhao, Wei Jia, Hailiang Dong, Zhigang Jia, Tianbao Li, Chunyan Yu, Zhuxia Zhang, Bingshe Xu |
---|---|
Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2022-12-01
|
Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/5.0127070 |
Similar Items
-
Numerical study on photoelectric properties of semi-polar 101̄1 green InGaN light-emitting diodes with quaternary AlInGaN quantum barriers
by: Ruimei Yin, et al.
Published: (2022-02-01) -
Ultraviolet GaN Light-Emitting Diodes with Porous-AlGaN Reflectors
by: Feng-Hsu Fan, et al.
Published: (2017-07-01) -
Improved Design of Slope-Shaped Hole-Blocking Layer and Electron-Blocking Layer in AlGaN-Based Near-Ultraviolet Laser Diodes
by: Maolin Gao, et al.
Published: (2024-04-01) -
Review on the Progress of AlGaN-based Ultraviolet Light-Emitting Diodes
by: Yuxuan Chen, et al.
Published: (2021-11-01) -
On the p-AlGaN/n-AlGaN/p-AlGaN Current Spreading Layer for AlGaN-based Deep Ultraviolet Light-Emitting Diodes
by: Jiamang Che, et al.
Published: (2018-11-01)