Thickness-dependent Raman active modes of SnS thin films

Tin sulfide (SnS) thin films have been reported to show strong layer number dependence on their ferroelectricity and Raman spectra. Identifying the number of layers and stacking structures is crucial for optoelectronic device fabrication. Here, we theoretically study the electronic and phononic prop...

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Main Authors: Itsuki Yonemori, Sudipta Dutta, Kosuke Nagashio, Katsunori Wakabayashi
Format: Article
Language:English
Published: AIP Publishing LLC 2021-09-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0062857
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author Itsuki Yonemori
Sudipta Dutta
Kosuke Nagashio
Katsunori Wakabayashi
author_facet Itsuki Yonemori
Sudipta Dutta
Kosuke Nagashio
Katsunori Wakabayashi
author_sort Itsuki Yonemori
collection DOAJ
description Tin sulfide (SnS) thin films have been reported to show strong layer number dependence on their ferroelectricity and Raman spectra. Identifying the number of layers and stacking structures is crucial for optoelectronic device fabrication. Here, we theoretically study the electronic and phononic properties of SnS thin films using first-principles calculations. We identify the characteristic Raman active phonon modes and their dependence on the number of layers and stacking sequences. The clear separation between surface modes and bulk modes is clarified for SnS thin films. In addition, we have clarified the relation between stacking structures and Raman active modes for bilayer SnS. Our results will serve the experimental characterization of such thin monochalcogenide systems through Raman spectra and will expedite their device fabrication.
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spelling doaj.art-fbd46f557a114a8599b8ac0901108cdb2022-12-21T22:32:39ZengAIP Publishing LLCAIP Advances2158-32262021-09-01119095106095106-610.1063/5.0062857Thickness-dependent Raman active modes of SnS thin filmsItsuki Yonemori0Sudipta Dutta1Kosuke Nagashio2Katsunori Wakabayashi3Department of Nanotechnology for Sustainable Energy, School of Science and Technology, Kwansei Gakuin University, Gakuen 2-1, Sanda, Hyogo 669-1337, JapanDepartment of Physics, Indian Institute of Science Education and Research (IISER) Tirupati, Tirupati 517507, Andhra Pradesh, IndiaDepartment of Materials Engineering, The University of Tokyo, Tokyo, JapanDepartment of Nanotechnology for Sustainable Energy, School of Science and Technology, Kwansei Gakuin University, Gakuen 2-1, Sanda, Hyogo 669-1337, JapanTin sulfide (SnS) thin films have been reported to show strong layer number dependence on their ferroelectricity and Raman spectra. Identifying the number of layers and stacking structures is crucial for optoelectronic device fabrication. Here, we theoretically study the electronic and phononic properties of SnS thin films using first-principles calculations. We identify the characteristic Raman active phonon modes and their dependence on the number of layers and stacking sequences. The clear separation between surface modes and bulk modes is clarified for SnS thin films. In addition, we have clarified the relation between stacking structures and Raman active modes for bilayer SnS. Our results will serve the experimental characterization of such thin monochalcogenide systems through Raman spectra and will expedite their device fabrication.http://dx.doi.org/10.1063/5.0062857
spellingShingle Itsuki Yonemori
Sudipta Dutta
Kosuke Nagashio
Katsunori Wakabayashi
Thickness-dependent Raman active modes of SnS thin films
AIP Advances
title Thickness-dependent Raman active modes of SnS thin films
title_full Thickness-dependent Raman active modes of SnS thin films
title_fullStr Thickness-dependent Raman active modes of SnS thin films
title_full_unstemmed Thickness-dependent Raman active modes of SnS thin films
title_short Thickness-dependent Raman active modes of SnS thin films
title_sort thickness dependent raman active modes of sns thin films
url http://dx.doi.org/10.1063/5.0062857
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